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ST Microelectronics
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Part No. |
STD60N55-1
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OCR Text |
... ds drain-source voltage (v gs =0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25c 65 a i d drain current...65a, di/dt < 300a/s, v dd < v (br)dss. tj < tjmax peak diode recovery voltage slope 8 v/ns e as ... |
Description |
N-channel Power MOSFET
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File Size |
417.30K /
12 Page |
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SSDI[Solid States Devices, Inc]
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Part No. |
SFF35N20Z SFF35N20M
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OCR Text |
...25C @ TC = 125C @ TC = 25C @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C ID1 ID2 ID3 IAR EAR PD TOP & TSTG R0JC
Value 200 20 85 12 55 35 60 210 -55 ...65A VGS = 10V VDS = 100V ID = 65A RG = 2.5O min IF = 65A, VGS = 0V IF = 50A, di/dt = 100A/usec VGS =... |
Description |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
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File Size |
39.29K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM50CY-H
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OCR Text |
...12
E1 B1
E1 B1 Tab#110, t=0.5
M5
31
LABEL
(8)
22.5
6.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50CY-H
MED...65A -IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=... |
Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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File Size |
71.32K /
5 Page |
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it Online |
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Price and Availability
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