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				Shindengen Electric Manufacturing Co., Ltd. SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SC4150
OCR Text	...orque TOR (Recommended torque : 0.3Nmj 0.5 Nm oeElectrical Characteristics (Tc=25*Z) Conditions Ratings Item Symbol Unit Collector to EmitterV (sus)I = 0.1A Sustaining Voltage Min 40 V C CEO Collector Cutoff Current At rated Voltage I Max...
Description	Switching Power Transistor(12A NPN) 开关功率晶体管（第12A NPN）的
File Size	261.19K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC4183
OCR Text	...cuit and other applications. 2.0 0.2 0.3 +0.1 -0 PACKAGE DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 FEATURES * Low NF and high Gpb NF = 3.0 dB Typ. Gpb = 10 dB Typ. (f = 900 MHz) * Foward AGC characteristics. 0.65 0.65 2 0...
Description	RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	43.35K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC4655
OCR Text	... 1.60.15 s Features q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment and automatic insertion...
Description	Transistors (Selection Guide by Applications and Functions) Silicon NPN epitaxial planer type(For high-frequency amplification)
File Size	54.28K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC3507
OCR Text	...the heat sink with one screw 0.7 15.00.3 11.00.2 5.00.2 3.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collec...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.35K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SK1300
OCR Text	...S V(BR)GSS I GSS 100 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	47.87K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1340
OCR Text	...S V(BR)GSS I GSS 900 30 -- -- 2.0 -- 2.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.0 3.2 740 305 150 15 70 90 90 0.9 900 Max -- -- 10 250 3.0 4.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 5 A, VGS...
Description	Silicon N-Channel MOS FET
File Size	47.72K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1341
OCR Text	...S V(BR)GSS I GSS 900 30 -- -- 2.0 -- 2.3 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.0 3.7 980 400 195 20 80 125 100 0.9 1000 Max -- -- 10 250 3.0 3.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 6 A, ...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	47.88K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SK1342
OCR Text	...S V(BR)GSS I GSS 900 30 -- -- 2.0 -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.2 5.5 1730 700 310 25 135 185 130 0.9 900 Max -- -- 10 250 3.0 1.6 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 8 A,...
Description	Silicon N-Channel MOS FET N沟道场效应晶体管
File Size	48.65K / 9 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SK3120
OCR Text	...062A [2SK3120] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current...
Description	N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	135.41K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK3304
OCR Text	...VDD = 450 V, VGS = 10 V, ID = 7.0 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 2.0 MAX. (VGS = 10 V, ID = 4.0 A) * Avalanche capability ratings (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Volta...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	65.60K / 8 Page	View it Online	Download Datasheet

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