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-32v Datasheet PDF File

For -32v Found Datasheets File :: 3215 Search Time::1.313ms
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				Advanced Power Electronics Corp.
Part No.	AP3R604AGH-HF14 AP3R604AGH-HF
OCR Text	...in-source leakage current v ds =32v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 52 83 nc q gs gate-source charge v ds =32v - 10 - nc q gd gate-drain ("miller") charge v...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	55.97K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPD85P04P4L-06
OCR Text	...tage drain current i dss v ds =-32v, v gs =0v, t j =25c - -0.05 -1 a v ds =-32v, v gs =0v, t j =125c 2) - -20 -200 gate-source leakage current i gss v gs =-16v, v ds =0v - - -100 na drain-source on-state resistance r ds(on) v gs =-4.5v, i d...
Description	OptiMOS-P2 Power-Transistor
File Size	150.89K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPD85P04P4-07
OCR Text	...tage drain current i dss v ds =-32v, v gs =0v, t j =25c - -0.05 -1 a v ds =-32v, v gs =0v, t j =125c 2) - -20 -200 gate-source leakage current i gss v gs =-20v, v ds =0v - - -100 na drain-source on-state resistance r ds(on) v gs =-10v, i d ...
Description	OptiMOS-P2 Power-Transistor
File Size	149.60K / 9 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CXDM4060P
OCR Text	...mhz 56 pf q g(tot) v ds =32v, v gs =4.5v, i d =6.0a 6.5 nc q gs v ds =32v, v gs =4.5v, i d =6.0a 3.2 nc q gd v ds =32v, v gs =4.5v, i d =6.0a 2.7 nc t on v ds =20v, v gs =10v, i d =1.0a 18 ns t off r g =3.0, r...
Description	SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
File Size	845.06K / 3 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9567GH-HF AP9567GH-HF14 AP9567GJ-HF
OCR Text	...e current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-15a - 12 19 nc q gs gate-source charge v ds =-32v - 2.5 - nc q gd gate-drain ("miller") ch...
Description	Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
File Size	98.53K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP0504GH-HF AP0504GH-HF14
OCR Text	...in-source leakage current v ds =32v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =30a - 14.5 23 nc q gs gate-source charge v ds =32v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v...
Description	Low On-resistance, Simple Drive Requirement 66 A, 40 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
File Size	90.88K / 4 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc.
Part No.	NPT25100
OCR Text	...aracterized for operation up to 32v ? 100% rf tested ? thermally enhanced industry standard package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to eccn 3a982.a.1 export control 2100 C 2700 mhz 125 ...
Description	Gallium Nitride 28V, 125W RF Power Transistor
File Size	1,057.16K / 13 Page	View it Online	Download Datasheet


Part No.	BSP742-T
OCR Text	... 60 80 s 120 t off 9v 13,5...32v typ. turn on time t on = f( t j ) ; r l = 47 w -40 -20 0 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 s 120 t on 9v 13,5v 32v typ. slew rate on dv/dt on = f( t j ) ; r l = 47 w -40 -20 0 20 4...
Description	Ultra Low Capacitance Transient Voltage Suppressor Diodes
File Size	213.99K / 16 Page	View it Online	Download Datasheet

For -32v Found Datasheets File :: 3215 Search Time::1.313ms
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