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  ver.1.50 Datasheet PDF File

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    EDS2508APSA EDS2508APSA-75 EDS2508APSA-75L EDS2508APSA-7A EDS2508APSA-7AL EDS2516APSA EDS2516APSA-75 EDS2516APSA-75L EDS

ELPIDA[Elpida Memory]
Part No. EDS2508APSA EDS2508APSA-75 EDS2508APSA-75L EDS2508APSA-7A EDS2508APSA-7AL EDS2516APSA EDS2516APSA-75 EDS2516APSA-75L EDS2516APSA-7A EDS2516APSA-7AL
OCR Text ...ction Document No. E0228E30 (Ver. 3.0) Date Published August 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc.2001-2002 ED...1 Features.............................................................................................
Description 256M bits SDRAM

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    EP1K30 EP1K100 EP1K30QC208-3 EP1K30QC208-2 EP1K30QC208-1 EP1K10QC208-3 EP1K10QC208-2 EP1K10QC208-1 ACEX1K EP1K50 ACEX1 E

ETC[ETC]
Altera Corp
Part No. EP1K30 EP1K100 EP1K30QC208-3 EP1K30QC208-2 EP1K30QC208-1 EP1K10QC208-3 EP1K10QC208-2 EP1K10QC208-1 ACEX1K EP1K50 ACEX1 EP1K10
OCR Text ver. 3.3 Features... s s s s Programmable logic devices (PLDs), providing low cost system-on-a-programmable-chip (SOPC) in...1) - Up to 49,152 RAM bits (4,096 bits per EAB, all of which can be used without reducing logic capa...
Description From old datasheet system
Programmable Logic Family
Simple PLD - Datasheet Reference
Programmable Logic Device Family

File Size 368.83K  /  86 Page

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    G1401 G1401P1

Global Mixed-mode Technology Inc.
GMT[Global Mixed-mode Technology Inc]
Part No. G1401 G1401P1
OCR Text ...t B output B positive supply Ver 1.1 Aug 13, 2001 TEL: 886-3-5788833 http://www.gmt.com.tw 1 Global Mixed-mode Technology Inc. Block Diagram G1401 OUTA INA(neg) INA(pos) 1 2 3 8 VDD G1401 _ 7 _ OUTB INB(neg) INB(...
Description Stereo Headphone Power Amplifier

File Size 208.85K  /  6 Page

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    HMS87C1104A HMS87C1204A HMS87C1202A HMS87C1102 HMS87C1102A HMS87C1302A HMS87C13042A

HYNIX[Hynix Semiconductor]
Part No. HMS87C1104A HMS87C1204A HMS87C1202A HMS87C1102 HMS87C1102A HMS87C1302A HMS87C13042A
OCR Text Ver 1.0 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS87C1304(2)A HMS87C1204(2)A HMS87C1104(2)A User's Manual HMS87C130XA/120XA/110XA 1. OVERVIEW ............................................................................................
Description 8-BIT SINGLE-CHIP MICROCONTROLLERS

File Size 928.57K  /  88 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...ty * Self-refresh capability (L-ver only) * Fast parallel test mode capability * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early W...1 A0 - A9 (A0 - A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer O...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...ty * Self-refresh capability (L-ver only) * Fast parallel test mode capability * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early W...1 A0 - A9 (A0 - A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer O...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...ty * Self-refresh capability (L-ver only) * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early Write or output enable controlled writ...1,048,576 x16 Cells OE tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns tPC 35ns 40ns...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.) * Singl...1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L KM62256DLP-7 KM62256DLP-7L KM62256DLRG-5 KM62256DLRG-5L KM62256DLRG-7 KM62256DLRG-7L KM62256DLRGI-7 KM62256DLRGI-7L KM62256DLTG-5 KM62256DLTG-5L KM62256DLTG-7 KM62256DLTG-7L KM62256DLTGI-7 KM62256DLTGI-7L
OCR Text ...Vcc-0.2V Vcc=3.0V, CSVcc-0.2V L-Ver LL-Ver See data retention waveform Min 2.0 0 5 Typ 1 0.2 Max 5.5 15 3 ms Unit V A Revision 1.0 November 1997 KM62256D Family TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, ...
Description 438100341
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM

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    KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681002CI-20 KM681002CJ-10 KM681002CJ-12 KM681002CJ-15 KM681002CJ-20 KM681002CL KM681002CL-10 KM681002CL-12 KM681002CL-15 KM681002CL-20 KM681002CLI KM681002CLI-10 KM681002CLI-12 KM681002CLI-15 KM681002CLI-20 KM681002CT-20 KM681002CLJ-10 KM681002CLJ-12 KM681002CLJ-15 KM681002CLJ-20 KM681002CLT-10 KM681002CLT-12 KM681002CLT-15 KM681002CLT-20 KM681002CT-10 KM681002CT-12 KM681002CT-15 KM681002CJ-20000 KM681002CJI-2000 KM681002CT-10000
OCR Text ...CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating KM681002C/CL-10 : 80mA(Max.) KM681002C/CL-12 : 75mA(Max.) KM681002C/CL-15 : 73mA(Max.) K...1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681...
Description 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32

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