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  u-mosii Datasheet PDF File

For u-mosii Found Datasheets File :: 74    Search Time::1.766ms    
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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC6201
OCR Text u-mosii) TPC6201 HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 80 m (typ.) High forward transfer admittance: |Yfs| = 3.8 S (typ.) Low leakage cu...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-mosii)
Field Effect Transistor Silicon N Channel MOS Type (u-mosii) HDD Motor Drive Applications Notebook PC Applications Portable Equipment Applications

File Size 154.38K  /  6 Page

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    TPC8204

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC8204
OCR Text u-mosii) TPC8204 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain-source ON resistance l Low leakage current l Enhancement-mode : RDS (ON) = 16 m ...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-mosii)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

File Size 336.16K  /  7 Page

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    TPC8003

Toshiba Semiconductor
Part No. TPC8003
OCR Text u-mosii) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : RDS (ON) = 5.4 m (typ.) High forward transfer adm...
Description Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

File Size 489.98K  /  6 Page

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    TPC8203

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC8203
OCR Text u-mosii) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance Low leakage current Enhancement-mode : RDS (ON) = 14 m (typ.) H...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-mosii)

File Size 417.12K  /  7 Page

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    Toshiba
Part No. SSM6K08FU EA09713
OCR Text u-mosii) SSM6K08FU High Speed Switching Applications * * * Small package Low on resistance: Ron = 105 m (max) (@VGS = 4 V) Ron = 140 m (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Maximum Rati...
Description High Speed Switching Applications
From old datasheet system

File Size 203.26K  /  5 Page

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    2SK3441

Toshiba Corporation
Toshiba Semiconductor
Part No. 2SK3441
OCR Text u-mosii) 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 4.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = ...
Description TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (u-mosii) RELAY DRYVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

File Size 221.41K  /  6 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3442
OCR Text u-mosii) 2SK3442 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: iYfsi = 28 S (typ.) Low leakage current:...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-mosii)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (u-mosii) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 200.42K  /  6 Page

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    TPC8206

Toshiba Semiconductor
Toshiba Corporation
Part No. TPC8206
OCR Text u-mosii) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward tran...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (u-mosii) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

File Size 218.90K  /  7 Page

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    2SK3236

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SK3236
OCR Text u-mosii) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications * * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (u-mosii) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 216.40K  /  6 Page

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    TPC8104-H

Toshiba Corporation
Toshiba Semiconductor
Part No. TPC8104-H
OCR Text u-mosii) TPC8104-H High Speed and High Efficiency DC-DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switching l Small gate charge...
Description Field Effect Transistor Silicon P Channel MOS Type (High Speed u-mosii) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed u-mosii)

File Size 315.06K  /  7 Page

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For u-mosii Found Datasheets File :: 74    Search Time::1.766ms    
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