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AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
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| Part No. |
AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29LV400BT120EC AM29LV400BT120ECB AM29LV400BT120EE AM29LV400BT120EEB AM29LV400BT120EI AM29LV400BT120EIB AM29LV400BT120FC AM29LV400BT120FCB AM29LV400BT120FE AM29LV400BT120FEB AM29LV400BT120FI AM29LV400BT120FIB AM29LV400BT120SC AM29LV400BT120SCB AM29LV400BT120SE AM29LV400BT120SEB AM29LV400BT120SI AM29LV400BT120SIB AM29LV400BT120WAC AM29LV400BT120WACB AM29LV400BT120WAE AM29LV400BT120WAEB AM29LV400BT120WAI AM29LV400BT120WAIB AM29LV400BT90FC AM29LV400BT90FCB AM29LV400BT90FE AM29LV400BT90FEB AM29LV400BT90FI AM29LV400BT90FIB AM29LV400BT70REC AM29LV400BT70RECB AM29LV400BT70REE AM29LV400BT70REEB AM29LV400BT70REI AM29LV400BT70REIB AM29LV400BT70RFC AM29LV400BT70RFCB AM29LV400BT70RFE AM29LV400BT70RFEB AM29LV400BT70RFI AM29LV400BT70RFIB AM29LV400BT70RSC AM29LV400BT70RSCB AM29LV400BT70RSE AM29LV400BT70RSEB AM29LV400BT70RSI AM29LV400BT70RSIB AM29LV400BT70RWAC AM29LV400BT70RWACB AM29LV400BT70RWAE AM29LV400BT70RWAEB AM29LV400BT70RWAI AM29LV400BT70RWAIB AM29LV400BT90SEB AM29LV400BT80SEB AM29LV400BT90WAIB AM29LV400BB120EE AM29LV400BB120EEB AM29LV400BB120EI AM29LV400BB120EIB AM29LV400BB120FC AM29LV400BB120FCB AM29LV400BB120FE AM29LV400BB120FEB AM29LV400BB
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| OCR Text |
...r architecture -- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) -- One 8 Kword, two 4 Kword, one 16 Kword,...cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write... |
| Description |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
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| File Size |
46.64K /
7 Page |
 View
it Online |
Download Datasheet
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NANYA TECHNOLOGY CORP
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| Part No. |
NT5SV8M16FT-6KI
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| OCR Text |
.... twelve addresses (a0-a11) and two bank select addresses (ba0, ba1) are strobed with ras . nine col- umn addresses (a0-a8) plus bank sele...cell array row decoder address buffers (15) column decoder sense amplifiers memory bank 3 cell arra... |
| Description |
8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
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| File Size |
747.36K /
65 Page |
View
it Online |
Download Datasheet |
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