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IXYS[IXYS Corporation]
IXYS, Corp.
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| Part No. |
IXFH52N30Q IXFK52N30Q IXFT52N30Q
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| OCR Text |
...torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width li...268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2... |
| Description |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
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| File Size |
69.16K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFH20N80Q IXFK20N80Q IXFT20N80Q
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| OCR Text |
...m case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC =...268AA (IXFT) (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.... |
| Description |
HiPerFETTM Power MOSFETs Q-Class
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| File Size |
71.32K /
2 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXFT32N50 IXFH32N50 IXFH30N50 IXFT30N50
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| OCR Text |
...) 0.16 W 0.15 W
trr 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test...268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.16惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
109.42K /
4 Page |
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it Online |
Download Datasheet |
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