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rad-.20 Datasheet PDF File

For rad-.20 Found Datasheets File :: 2879 Search Time::1.125ms
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				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM53232004BV
OCR Text	... to column address delay time t rad 15 25 15 30 ns cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row ...20 25 ns 11 cas precharge time (hyper page cycle) t cp 8 10 ns ras pulse width (hyper page cycl...
Description	32M x 32 DRAM SIMM(32M x 32 动RAM模块)
File Size	401.25K / 20 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM5116800C-XXTS-K MSM5116800C-XXTS-L MSM5116800C-50TS-K
OCR Text	... rasp t rsh t cas t csh t rcd t rad t crp t asr t rah t asc t cah t ral t rcs t rch t rrh t oea t oez t ref t roh t rhcp output low impedanc...20 10 20 70 20 15 5 0 10 0 15 35 0 0 0 0 20 40 max. 70 20 35 40 20 50 10,000 100,000 10,00...
Description	2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器：快速页面模式型
File Size	449.76K / 16 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM5364005CSWG
OCR Text	... to column address delay time t rad 15 25 15 30 ns cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row ...20 25 ns 11 cas precharge time (hyper page cycle) t cp 8 10 ns ras pulse width (hyper page cycl...
Description	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
File Size	417.45K / 21 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM5364005BSWG
OCR Text	... to column address delay time t rad 15 25 15 30 ns cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row ...20 25 ns 11 cas precharge time (hyper page cycle) t cp 8 10 ns ras pulse width (hyper page cycl...
Description	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
File Size	389.50K / 19 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	FRX130D FRX130D1 FRX130D3 FRX130H FRX130H4 FRX130R FRX130R1 FRX130R3 FRX130R4 FN3144
OCR Text	...ose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 1...20 11.4 4.5 0.09 18 6 18 -55 to 150 300 UNITS V V A A A V W W W/oC A A A oC oC Drain to Source Vo...
Description	Radiation Hardened N-Channel Power MOSFETs 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	34.94K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text	... 0.023 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated...20 162 65 1.30 192 64 192 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC CAUTION: Stresse...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
File Size	73.87K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text	.../Cretor () /DOCI - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...20 162 65 1.30 177 59 177 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC Drain to Source ...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
File Size	51.24K / 8 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM5361203C2W
OCR Text	... to column address delay time t rad 15 25 15 30 ns 10 cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row...20 5 ns 11 ac characteristics (0 c t a 70 c, v cc =5.0v 10%. see notes 1,2.) 11. dram module...
Description	1M x 36 DRAM SIMM(1M x 36 动RAM模块)
File Size	235.89K / 16 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRH7450
OCR Text	...500volt, 0.45 w w w w w , mega rad hard hexfet international rectifiers rad hard technology hexfets demonstrate excellent threshold voltag...20 v i dss zero gate voltage drain current 50 100 a v ds =0.8 x max rating, v gs =0v r ds(on)1 st...
Description	(IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	324.59K / 12 Page	View it Online	Download Datasheet

				Maxwell Technologies ETC
Part No.	28C011TRT2F 28C011TRT2FB 28C011TRT2FE 28C011TRT2FI 28C011TRT2FS 28C011TRPFB12 28C011TRPFB15 28C011TRPFB20 28C011TRPFS20 28C011TRT1FS20 28C011TRT2FS20 28C011TRT4FS20 28C011TRPFS12 28C011TRPFS15 28C011TRT1FS12 28C011TRT2FS12 28C011TRT1FS15 28C011TRT2FS15 28C011TRT4FS12 28C011TRT4FS15 28C011TRPFE12 28C011TRPFE20 28C011TRT1FE20 28C011TRT2FE20 28C011TRT4FE20 28C011TRT1FB12 28C011TRT1FB15 28C011TRT1FB20 28C011TRT1FE15 28C011TRT1FE12 28C011TRPFI12 28C011TRT1FI12 28C011TRT4FI12 28C011TRT2FI12 28C011TRT2FB12 28C011TRT2FB15 28C011TRT2FB20 28C011TRPFE15 28C011TRT1FI20
OCR Text	...TURES: * 128k x 8-bit EEPROM * RAD-PAK(R) radiation hardened against natural space radiation * Total dose hardness: - > 100 krad (Si), depe...20 mW/MHz active (typical) - 110 W standby (maximum) * Screening per TM 5004 * QCI per TM5005 DES...
Description	1 megabit (128K x 8-bit) - EEPROM 1 Megabit (128K x 8-Bit) EEPROM
File Size	239.71K / 16 Page	View it Online	Download Datasheet

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