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  power field effect transistor Datasheet PDF File

For power field effect transistor Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A TMOS power field effect transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS power FET 14 AMPERES
From old datasheet system
TMOS E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
power MOS field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J13T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch High Speed Switching Applications

File Size 170.34K  /  6 Page

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    ERICSSON power MODULES AB
Ericsson Microelectronics
Part No. PTF10020
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF power, MOSFET
125 Watts/ 860-960 MHz GOLDMOS field effect transistor
125 Watts, 86060 MHz GOLDMOS field effect transistor

File Size 313.64K  /  6 Page

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    NDP6020P NDB6020P

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
Part No. NDP6020P NDB6020P
Description P-Channel Enhancement Mode field effect transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, power, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode field effect transistor

File Size 60.89K  /  6 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF power field effect transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF power field effect transistor 60 W 860-960 MHz
LDMOS RF power field effect transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J14T
Description TOSHIBA field effect transistor Silicon P Channel MOS Type (U-MOSII)
field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch DC-DC Converters

File Size 174.66K  /  6 Page

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    MTD3055VL MTD3055VLNL

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. MTD3055VL MTD3055VLNL
Description N-Channel Logic Level Enhancement Mode field effect transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, power, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE field effect transistor

File Size 174.41K  /  3 Page

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    2SK3079A

Toshiba.
TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3079A
Description field effect transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
transistor,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA field effect transistor Silicon N Channel MOS Type

File Size 112.65K  /  5 Page

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    PTF181301 PTF181301A

INFINEON[Infineon Technologies AG]
Part No. PTF181301 PTF181301A
Description LDMOS RF power field effect transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF power field effect transistor 130 W/ 1805-1880 MHz

File Size 63.03K  /  4 Page

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For power field effect transistor Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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