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  pf b Datasheet PDF File

For pf b Found Datasheets File :: 137968    Search Time::2.25ms    
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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text ...-e--E VCb=-6V, I E=0, V MHz pf f=1MHz 2SA2027 'aZu"g"d--I`***--p VSR" PNPGs^LV@OE *W*"A* ROEN^`Z*|ZuI*"x"A* 1000 G~b^*U'n*o--I"A**iP*j -30 Ib=-250uA Ib=-200uA Ta=25*Z ROEN^"d--*@I C(mA) 800 ROEN^`Z*@P C(mW) Ib=-1...
Description SILICON EPITAXIAL TRANSISTOR<br>
File Size 54.89K  /  4 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ...llector Output Capacitance Cob (pf) Emitter Input Capacitance Cib (pf) base to Emitter Saturation Voltage vs. Collector Current Input and Output Capacitance vs. voltage 70 60 50 40 30 20 10 0 -0.1 Cob(IE = 0) Cib(IC = 0) f = 1 MHz ...
Description Silicon PNP Epitaxial<br>
File Size 35.43K  /  8 Page

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    2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K

HITACHI[Hitachi Semiconductor]
Part No. 2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text ...-- -- -- -1.0 -1.0 200 -1.0 V V pf MHz ns s s Unit V V A A A Test conditions I C = -50 A, IE = 0 I C = -50 A, RbE = 30 k VCb = -100 V, IE = ...b = -1 mA I C = -15 mA, I b = -1 mA VCb = -10 V, IE = 0, f = 1 MHz VCE = -3 V, I C = -15 mA VCC = -1...
Description Silicon PNP Epitaxial<br>
File Size 41.66K  /  8 Page

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    2SA794 2SA794A 2SA0794 2SC1567A 2SA0794A 2SC1567

PANASONIC[Panasonic Semiconductor]
Part No. 2SA794 2SA794A 2SA0794 2SC1567A 2SA0794A 2SC1567
OCR Text ...VCE(sat) VbE(sat) fT Cob MHz pf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for ...b -1.2 VCE = -10 V TC = 25C Collector power dissipation PC (W) -1.0 -1.0 Collector curr...
Description Silicon PNP epitaxial planar type<br>
File Size 83.58K  /  4 Page

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    2SA836

HITACHI[Hitachi Semiconductor]
Part No. 2SA836
OCR Text ...E(sat) VbE fT Cob NF V V MHz pf db db I C = -10 mA, Ib = -1 mA VCE = -12 V, IC = -2 mA VCE = -12 V, IE = -2 mA VCb = -10 V, IE = 0, f ...b db 6 b 4d d db 5 3 db 2 db 1 Contours of Constant Noise Figure (1) 50 k 20 k 10 k 5k 2k 1k 500 ...
Description Silicon PNP Epitaxial<br>
File Size 31.87K  /  6 Page

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text ... - 0.1 -100 -10 220 V V MHz db pf Unit A A *h FE Rank classification b 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 -30 Ta=25C 450 -25 2SA838 IC -- VCE Collector to emitter saturation voltage VCE(sat) (...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)<br>
File Size 36.38K  /  2 Page

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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text ...-- -0.75 V -0.5 -- -- 5.0 V MHz pf db Unit V A A Test conditions I C = -1 mA, RbE = VCb = -75 V, IE = 0 VCE = -100 V, IE = 0 VCE = -12 V, I...b = -1 mA VCE = -12 V, I C = -2 mA VCb = -25 V, IE = 0, f = 1 MHz VCE = -6 V, f = 10 Hz I C = -50 A ...
Description Silicon PNP Transistor<br>Silicon PNP Epitaxial<br>
File Size 36.33K  /  7 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ...Typ Max Unit V V A A A V V MHz pf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for ...b and E) VCER IE=0 f=1MHz TC=25C -50 -30 ICEO (Ta) ICEO (Ta = 25C) -40 100 -20 ...
Description Power Device - Power Transistors - Others<br>Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)<br>
File Size 89.38K  /  5 Page

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    2SA893 2SA893A

HITACHI[Hitachi Semiconductor]
Part No. 2SA893 2SA893A
OCR Text ...800 -0.75 V -0.5 -- -- 10 V MHz pf db Unit V A A Test conditions I C = -1 mA, RbE = VCb = -75 V, IE = 0 VCb = -100 V, IE = 0 VCE = -12 V, I C = -2 mA VCE = -12 V, I C = -2 mA I C = -10 mA, I b = -1 mA VCE = -12 V, I C = -2 mA VCb = -25 V, ...
Description Silicon PNP Epitaxial<br>
File Size 23.37K  /  5 Page

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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2Sb1001
OCR Text ...sat) VbE(sat) fT Cob V V MHz pf I C = -1 A, I b = -0.1 A (Pulse test) I C = -1 A, I b = -0.1 A (Pulse test) VCE = -2 V, I C = -10 mA VCb = -10 V, IE = 0, f = 1 MHz 1. The 2Sb1001 is grouped by hFE as follows. bH 100 to 200 bJ 160 t...
Description Silicon PNP Transistor<br>Silicon PNP Epitaxial<br>
File Size 31.26K  /  6 Page

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For pf b Found Datasheets File :: 137968    Search Time::2.25ms    
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