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CEL[California Eastern Labs]
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| Part No. |
NESG2031M05-T1-A NESG2031M05 NESG2031M05-T1
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| OCR Text |
...NESG2031M05 is fabricated using necs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. necs low profile, flat lead st... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
572.15K /
13 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG2101M05-T1-A NESG2101M05
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| OCR Text |
...NESG2101M05 is fabricated using necs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators necs low profile, flat lead sty... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
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| File Size |
390.70K /
15 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NX5307EK-AZ NX5307 NX5307EH-AZ
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| OCR Text |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5307 SERIES FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
FEATURES
* OPTICAL OUTPUT POWER: PO = 10 mW * LOW THRESHOLD CURRENT : ITH = 10 mA * HIGH SPEED: tr = 0.2 ns MAX tf = 0.2 ns MAX * W... |
| Description |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
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| File Size |
346.51K /
8 Page |
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it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NX6406GK-AZ NX6406 NX6406GH-AZ
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| OCR Text |
necs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: PO = 5.0 mW * LOW THRESHOLD CURRENT : ITH = 10 mA * DIFFERENTIAL EFFICIENCY: d = 0.3 W/A * WIDE OPERATING TEM... |
| Description |
necs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
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| File Size |
269.88K /
5 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NX6506GK-AZ NX6506 NX6506GH-AZ
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| OCR Text |
necs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: PO = 5.0 mW * LOW THRESHOLD CURRENT: ITH = 10 mA * DIFFERENTIAL EFFICIENCY: d = 0.25 W/A * SIDE... |
| Description |
necs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
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| File Size |
267.67K /
5 Page |
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it Online |
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Samsung
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| Part No. |
KS32C50100
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| OCR Text |
...CK TMS TDI TDO nTRST TMODE UCLK necs nEWAIT nOE B0SIZE
: : : : : : :
inbit; inbit; inbit; outbit; inbit; inbit; inbit;
: outbit_vector(0 to 3); : inbit; : outbit; : inbit_vector(0 to 1);
CLKOEN MCLKO MCLK nRESET CLKSEL nRCS nRAS... |
| Description |
RISC Microcontroller
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| File Size |
52.54K /
11 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NX5307 NX5307EH-AZ NX5307EK-AZ
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| OCR Text |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5307 SERIES FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
FEATURES
* OPTICAL OUTPUT POWER: PO = 10 mW * LOW THRESHOLD CURRENT : ITH = 10 mA * HIGH SPEED: tr = 0.2 ns MAX tf = 0.2 ns MAX * W... |
| Description |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱中的FP激光可以为2.5 GB的包装二极管/ s的内部办公应
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| File Size |
405.90K /
8 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
NX5310 NX5310EH-AZ NX5310EK-AZ
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| OCR Text |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 5.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0... |
| Description |
necs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
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| File Size |
296.52K /
5 Page |
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it Online |
Download Datasheet |
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