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Samsung Electronic
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Part No. |
M464S6453DKS
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OCR Text |
...cycle with address key programs latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock * Serial presence det... |
Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
139.66K /
11 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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Part No. |
M464S6453CKS
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OCR Text |
...cycle with address key programs latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock * Serial presence det... |
Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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File Size |
79.34K /
12 Page |
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it Online |
Download Datasheet
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Part No. |
K4T51163QI-HIE70
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OCR Text |
... 6-6-6 ddr2-667 5-5-5 units cas latency 5 6 5 tck trcd(min) 12.5 15 15 ns trp(min) 12.5 15 15 ns trc(min) 57.5 60 60 ns ? jedec standard 1.8v 0.1v power supply ? vddq = 1.8v 0.1v ? 333mhz f ck for 667mb/sec/pin, 400mhz f ck for 800mb/se... |
Description |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
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File Size |
801.23K /
42 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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Part No. |
M464S6453BK0
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OCR Text |
...cycle with address key programs latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock * Serial presence det... |
Description |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Datasheet
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File Size |
142.67K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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