INND-SS30 pdf Datasheet P2 Part Num --- IC-ON-LINE

Toshiba Electronic Devices & Storage Corporation

Part No.

Description

Switching Diode, 80 V, 0.1 A, ESC, AEC-Q101

Tech specs

Official Product Page


	Part Number	Hot Search : R7S22008 SMA160 FCX1147A 7298BCPZ TSM10101 LF357BN LTV8192M FN456
	Product Description
	Full Text Search

INND-SS30 Datasheet PDF File

For INND-SS30 Found Datasheets File :: 143+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	1SS300
Description	DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)
File Size	126.58K / 2 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial ... Guangdong Kexin Industrial Co.,Ltd
Part No.	1SS302
Description	ULTRA HIGH SPEED SWITCHING APPLICATIONS
File Size	39.78K / 1 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd TY Semicondutor
Part No.	1SS301
Description	Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Ultra High Speed Switching Application
File Size	65.71K / 1 Page	View it Online	Download Datasheet

				TY Semicondutor
Part No.	1SS306
Description	Silicon Epitaxial Planar Type
File Size	58.64K / 1 Page	View it Online	Download Datasheet


Part No.	1SS304-T1
Description	0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
File Size	57.56K / 3 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	1SS303
Description	Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
File Size	67.56K / 1 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	1SS300
Description	Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
File Size	67.43K / 1 Page	View it Online	Download Datasheet

For INND-SS30 Found Datasheets File :: 143+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |