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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8513
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| Description |
NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8515
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| Description |
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8606
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| Description |
PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8605
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| Description |
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8512
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| Description |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8514
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| Description |
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TPCP8607
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| Description |
PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PS-8
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| Tech specs |
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Official Product Page
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