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Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
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| Part No. |
RQM2201DNSTR-E RQM2201DNS RQM2201DNSTL-E
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| OCR Text |
...A-A
(Package name: WSON0303-6 <HWSON-6>)
FET No.1 (Nch) 6 D FET No.2 (Nch) 5 D 4 G
5
6
2 G
1
4
4
32
1
(Bottom vie...8 2 1 1.5 150 -55 to +150 Unit V V A A A W W C C
Notes: 1. PW 10 s, Duty cycle 1% 2. 1 Drive op... |
| Description |
Silicon N Channel MOS FET Power Switching 通道场效应晶体管功率开
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| File Size |
112.34K /
8 Page |
 View
it Online |
Download Datasheet
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Renesas Electronics Corporation
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| Part No. |
RJK03E0DNS-00-J5
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| OCR Text |
...de: PWSN0008JB-A (Package name: hwson-8)
5678 DDDD
5 6 78
4 G
4321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain... |
| Description |
30 A, 30 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, hwson-8
Silicon N Channel Power MOS FET Power Switching
|
| File Size |
135.12K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Renesas Electronics Corporation
|
| Part No. |
RJK03E2DNS-00-J5
|
| OCR Text |
...de: PWSN0008JB-A (Package name: hwson-8)
5678 DDDD
5 6 78
4 G
4321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain... |
| Description |
16 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, hwson-8
Silicon N Channel Power MOS FET Power Switching
|
| File Size |
136.37K /
7 Page |
View
it Online |
Download Datasheet |
|
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