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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...l Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Mult...page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...rial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Relia...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...rial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Relia...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...rial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Relia...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    M2764A M2764A-2F1 M2764A-3F1 M2764AF1 M27256F6 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
N.A.
ST Microelectronics
Part No. M2764A M2764A-2F1 M2764A-3F1 M2764AF1 M27256F6 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 M27256-4F6 M27256F1
OCR Text FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max TTL COMPATIBLE DURING READ and PRO...page. The Fast Programming Algorithm utilizes two different pulse types: initial and overprogram. Th...
Description NMOS 64K 8K x 8 UV EPROM NMOS4KK的8紫外线存储器
NMOS 256K 32K x 8 UV EPROM
NMOS 64K (8K x 8) UV EPROM

File Size 107.86K  /  10 Page

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    M29W640D M29DW323

ST Microelectronics
意法半导
STMicroelectronics
Part No. M29W640D M29DW323
OCR Text ...m, Erase and Read Vpp = 12V for fast Program (optional) Programming Time 10s per Byte/Word typical Double Word / Quadruple Byte Program Low ...page 3 Bank Architecture M29DW323 DUAL BANK Memory Array 8Mb + 24Mb While Programming or Era...
Description Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC
FLASH NOR HIGH DENSITY & CONSUMER

File Size 1,807.30K  /  15 Page

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    MAX301 MAX301CJE MAX301CPE MAX301CSE MAX301EJE MAX301EPE MAX301ESE MAX301-MAX305 MAX301MJE MAX301MLP MAX303 MAX303CJE MA

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Part No. MAX301 MAX301CJE MAX301CPE MAX301CSE MAX301EJE MAX301EPE MAX301ESE MAX301-MAX305 MAX301MJE MAX301MLP MAX303 MAX303CJE MAX303CPE MAX303CSE MAX303EJE MAX303EPE MAX303ESE MAX303MJE MAX303MLP MAX301-BMAX305 MAX305CSE MAX305MLP MAX301C_D MAX303C_D MAX305C_D MAX305CJE MAX305CPE MAX305EJE MAX305EPE MAX305ESE MAX305MJE MAX303C/D MAX301C/D MAX305C/D
OCR Text ... and less than 6nA at +85C) and fast switching (turn-on time less than 150ns and turn-off time less than 100ns). The MAX301/MAX303/MAX305 ar...page. * Contact factory for dice specifications. ** Contact factory for package availability. ___...
Description Precision, Dual, High-Speed Analog Switches DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDIP16
Precision, Dual, High-Speed Analog Switches 精密,双路,高速模拟开
Precision / Dual / High-Speed Analog Switches
15kV ESD-Protected / 3.3V Quad RS-422 Transmitters
Precision Dual High-Speed Analog Switches

File Size 91.91K  /  8 Page

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    MAX811TEUS

Maxim Integrated Products
Part No. MAX811TEUS
OCR Text ...omparator is designed to ignore fast transients on VCC. Reset thresholds for this device is 3.08V. Low supply current makes the MAX811T idea...PAGE 2 OF 3 ...
Description PLASTIC ENCAPSULATED DEVICES

File Size 54.89K  /  8 Page

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    MAX811 MAX811EUS-T MAX811-MAX812 MAX812EUS-T MAX811MEUS-T

Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
Part No. MAX811 MAX811EUS-T MAX811-MAX812 MAX812EUS-T MAX811MEUS-T
OCR Text ...omparator is designed to ignore fast transients on VCC. Reset thresholds are available for operation with a variety of supply voltages. Low ...PAGE FOR MARKING INFORMATION. ________________________________________________________________ Ma...
Description Microprocessor voltage monitor with manual reset input. Reset threshold voltage 4.38V
Hex D-type Flip-Flops With Clear 16-CDIP -55 to 125
4-Pin レP Voltage Monitors with Manual Reset Input
4-Pin P Voltage Monitors with Manual Reset Input

File Size 115.55K  /  8 Page

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    MC68040 MC68EC040 MC68360UMAD

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MC68040 MC68EC040 MC68360UMAD
OCR Text ...UICCs used in systems with very fast ramp-up times may experience problems at power-on reset. When the problem occurs, the QUICC never comes...page 5-3, the data bus on figure 5-1 shows the data bus to be 16 bit. This is not correct, the data ...
Description Errata and Added Information to MC68360 Quad Integrated Communication Controller User Manual Rev 1

File Size 158.90K  /  28 Page

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