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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK111G
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| Description |
Load Switch IC, 1.1 to 5.5 V, 3.0 A, Inrush current reducing / Reverse current blocking, WCSP6C
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK301G
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| Description |
Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK321G
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| Description |
Load Switch IC, 2.3 to 36 V, 2.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP16C
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK323G
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| Description |
Load Switch IC, 2.3 to 36 V, 2.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP16C
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| Tech specs |
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Official Product Page
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Hynix Semiconductor, Inc.
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| Part No. |
HDM8515P
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| Description |
Operational Amplifier (Op-Amp) IC; Number of Amplifiers:4; Package/Case:14-DIP; Op Amp Type:Low Power; Single Supply Voltage Min ( V):3V; Dual Supply Voltage Max ( /- V):16V; Amplifier Type:Operational; Mounting Type:Through Hole 的DVB /决策支持系统兼容接收
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| File Size |
292.18K /
75 Page |
 View
it Online |
Download Datasheet
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK304G
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| Description |
Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK305G
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| Description |
Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK401G
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| Description |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
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| Tech specs |
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Official Product Page
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Hynix Semiconductor Inc.
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| Part No. |
HDM8513AT HDM8513AP
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| Description |
Darlington Bipolar Transistor; Power Dissipation:175W; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:20A; Voltage Rating:500V
Timer IC; Supply Voltage Max:16V; Package/Case:14-DIP; Current Rating:10A; Timer Type:Timer-Dual; Mounting Type:Through Hole
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| File Size |
277.99K /
67 Page |
View
it Online |
Download Datasheet |
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK425G
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| Description |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK423G
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| Description |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TCK420G
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| Description |
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
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| Tech specs |
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Official Product Page
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