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  diode-100v Datasheet PDF File

For diode-100v Found Datasheets File :: 10177    Search Time::2.797ms    
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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ... nC nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Induc...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 110 ID = 22A 1...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 22A 15...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 4...100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...petitive Avalanche EnergyW Peak Diode Recovery dv/dt SX Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 100V 70V 520 3.8 200 1.3 20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm fr...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , ...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 2 20V (VGS = 0 , ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Th...100V ID = 13.9A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pu...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Th...100V ID = 22A RG = 2.35W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pul...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 190 ID = 28A 26...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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For diode-100v Found Datasheets File :: 10177    Search Time::2.797ms    
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