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For curves Found Datasheets File :: 61461    Search Time::1.734ms    
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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ...00 to 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 600 400 200 0 50 100 150 Ambient Temperature Ta (C) 3 Unit: m...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ... - Electrical characteristic curves 1000 1000 VCE=2V VCE=2V 1000 500 IC / IB=20 COLLECTOR CURRENT : IC (mA) 500 500 Ta=125C Ta=25C Ta= -40C 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 Ta=125C Ta=25C Ta= -...
Description Low frequency transistor

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    2SA2048

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2048
OCR Text ...0 !Electrical characteristic curves -10 1000 COLLECTOR CURRENT : IC (A) -1 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) 10ms 1ms Ta=25C VCC= -25V IC/IB=10/1 1000 VCE= -2V 100 Ta=125C Ta=25C Ta= -40C 10 Tstg...
Description Medium power transistor (−30V, −1.0A)
Medium power transistor (-30V, -1.0A)

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...0 !Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) 1000 1ms 10ms SWITCHING TIME : (ns) -1 100ms DC -0.1 DC CURRENT GAIN : hFE Ta=25C VCC= -25V IC/IB=10/1 Tstg 1000 VCE= -2V 100 Ta=125C Ta=25C T...
Description MEDIUM POWER TRANSISTOR

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...sistance rth (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: Pulse width tw ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...sistance rth (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu Pulse width tw ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...sistance rth (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu Pulse width tw ...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...sistance rth (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: Pulse width tw ...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...sistance rth (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu Pulse width tw ...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...ce rth (j-a) (C/W) 100 10 curves should be applied in thermal limited area. Single nonrepetitive pulse 1 0.001 2 Ta = 25C Mounted an on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 0.01 0.1 1 10 100 1000 Pulse width ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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