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IXYS, Corp.
IXYS Corporation
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| Part No. |
IXTQ220N055T IXTH220N055T
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| OCR Text |
...ed by t jm 600 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 ? p d t c = 25 c 430 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062... |
| Description |
220 A, 55 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET TO-3P, 3 PIN
N-Channel Enhancement Mode
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| File Size |
196.31K /
5 Page |
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it Online |
Download Datasheet
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IXYS, Corp.
IXYS Corporation
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| Part No. |
IXTQ220N075T IXTH220N075T
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| OCR Text |
...ed by t jm 600 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 3.3 p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.06... |
| Description |
220 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET TO-3P, 3 PIN
N-Channel Enhancement Mode
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| File Size |
180.56K /
5 Page |
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it Online |
Download Datasheet |
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IXYS Corporation
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| Part No. |
IXTL2X240N055T
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| OCR Text |
...ed by t jm 650 a i as t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 3.3 p d t c = 25 c 150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.06... |
| Description |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5
N-Channel Enhancement Mode Avalanche Rated
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| File Size |
62.11K /
2 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
IXGH25N100AU1
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| OCR Text |
... t c = 25 c50a i c90 t c = 90 c25a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 w i cm = 50 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t ... |
| Description |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
315.47K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP40N20
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| OCR Text |
...ent (continuous) at t c = 100 c25a i dm ( ) drain current (pulsed) 160 a p tot total dissipation at t c = 25 c 160 w derating factor 1.28 w/ c dv/dt (1) peak diode recovery voltage slope 12 v/ns t j t stg operating junction temperat... |
| Description |
N-CHANNEL 200V - 0.040 Ohm - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET
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| File Size |
254.40K /
11 Page |
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it Online |
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IXYS
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| Part No. |
IXBH16N170 IXBT16N170
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| OCR Text |
...sient 30 v i c25 t c = 25 c25a i c90 t c = 90 c16a i cm t c = 25 c, 1 ms 40 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 i cm =40 a (rbsoa) clamped inductive load v ces = 1350 v p c t c = ... |
| Description |
Discrete IGBTs
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| File Size |
48.93K /
2 Page |
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it Online |
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Mitsubishi Electric Semiconductor
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| Part No. |
FX50KMJ-06
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| OCR Text |
... d = C1ma, v ds = C10v i d = c25a, v gs = C10v i d = c25a, v gs = C4v i d = c25a, v gs = C10v i d = c25a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C30v, i d = c25a, v gs = C10v, r gen = r gs = 50 w i s = c25a, v... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
50.73K /
4 Page |
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it Online |
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Mitsubishi Electric Semiconductor
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| Part No. |
FX50KMJ-2
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| OCR Text |
... d = C1ma, v ds = C10v i d = c25a, v gs = C10v i d = c25a, v gs = C4v i d = c25a, v gs = C10v i d = c25a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C50v, i d = c25a, v gs = C10v, r gen = r gs = 50 w i s = c25a, v... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
50.60K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
Powerex Power Semiconductors
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| Part No. |
FX50KMJ-2
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| OCR Text |
... d = C1ma, v ds = C10v i d = c25a, v gs = C10v i d = c25a, v gs = C4v i d = c25a, v gs = C10v i d = c25a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C50v, i d = c25a, v gs = C10v, r gen = r gs = 50 w i s = c25a, v... |
| Description |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
55.87K /
4 Page |
View
it Online |
Download Datasheet |
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