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				HITACHI[Hitachi Semiconductor]
Part No.	2SA872 2SA872A
OCR Text	... V, I C = -2 mA I C = -10 mA, I b = -1 mA VCE = -12 V, I C = -2 mA VCb = -25 V, IE = 0, f = 1 Mhz VCE = -6 V, f = 10 hz I C = -50 A Rg = 50 ...h FE1 as follows. 2 2SA872, 2SA872A Maximum Collector Dissipation Curve Collector Power Dissi...
Description	Silicon PNP Transistor<br>Silicon PNP Epitaxial<br>
File Size	36.33K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SA893 2SA893A
OCR Text	... V, I C = -2 mA I C = -10 mA, I b = -1 mA VCE = -12 V, I C = -2 mA VCb = -25 V, IE = 0, f = 1 Mhz VCE = -6 V, I C = -50 A Rg = 50 k, f = 1 k...h FE as follows. E 400 to 800 250 to 500 See characteristic curves of 2SA872 and 2SA872A 2 ...
Description	Silicon PNP Epitaxial<br>
File Size	23.37K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2Sb566 2Sb566A 2Sb566AK 2Sb566K hITAChILTD.-2Sb566AK
OCR Text	...urn off time Storage time Note: b 60 to 120 t on t off t stg 1. The 2Sb566(K) and 2Sb566A(K) are grouped by h FE1 as follows. C 100 to 200 2 2Sb566(K), 2Sb566A(K) Maximum Collector Dissipation Curve Area Safe Operation 60 Collecto...
Description	Silicon PNP Triple Diffused<br>
File Size	32.51K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2Sb642
OCR Text	... -60 VCE=-5V Ta=25C IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 4...h Parameter -- IE 300 hfe 100 100 300 h Parameter -- VCE 100 IE=2mA f=270hz Ta=25C 30 ICbO -...
Description	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)<br>
File Size	49.24K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2Sb647 2Sb647A
OCR Text	... C = -500 mA2 I C = -500 mA, I b = -50 mA2 VCE = -5 V, I C = -150 mA*2 Typ -120 -- -80 -5 -- 60 30 -- -- -- -- -- -- -- -- -- -- -- ...h FE1 as follows. 2. Pulse test b 2Sb647 2Sb647A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 t...
Description	Silicon PNP Transistor<br>Silicon PNP Epitaxial<br>
File Size	32.10K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2Sb649 2Sb649A
OCR Text	... C = -500 mA*2 I C = -500 mA, I b = -50 mA VCE = -5 V, I C = -150 mA VCE = -5 V, I C = -150 mA VCb = -10 V, IE = 0, f = 1 Mhz Min Typ ...h FE1 as follows. 2. Pulse test b 2Sb649 2Sb649A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 t...
Description	Silicon PNP Epitaxial<br>
File Size	34.81K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2Sb709A 2SD601A
OCR Text	... -60 VCE=-5V Ta=25C IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 160 -80 Ib=-300A -60 -250A -200A...h Parameter -- IE 5 Noise figure NF (db) Noise figure NF (db) h Parameter 4 14 12 ...
Description	Silicon PNP epitaxial planer type<br>
File Size	47.56K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2Sb738 2Sb739
OCR Text	...or output capacitance Cob Note: b 100 to 200 1. The 2Sb738 and 2Sb739 are grouped by h FE as follows. C 160 to 320 2 2Sb738, 2Sb739 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (m...
Description	Silicon PNP Transistor<br>Silicon PNP Epitaxial<br>
File Size	30.61K / 6 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2Sb745 2Sb745A 2SD661A 2Sb0745 2SD661
OCR Text	... VCE=-5V Ta=25C -140 IC -- I b Collector power dissipation PC (mW) 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 -300A -250A -200A -1...
Description	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR<br>
File Size	49.87K / 3 Page	View it Online	Download Datasheet

				友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	2Sb772 b772 UTC2Sb772
OCR Text	...A -Ib=8MA -Ib=7mA S/ 8 b lim 0.8 ite d io at ip ss Di -Ib=4mA -Ib=3mA 0.4 50 4 n lim -Ib=2mA -Ib=1mA 0...h FE 3 10 VbE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 ...
Description	MEDIUM POWER LOW VOLTAGE TRANSISTOR<br>PNP EPITAXIAL SILICON TRANSISTOR<br>
File Size	45.29K / 2 Page	View it Online	Download Datasheet

For b h Found Datasheets File :: 217921 Search Time::7.672ms
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