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9mh Datasheet PDF File

For 9mh Found Datasheets File :: 273 Search Time::0.938ms
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				Samsung semiconductor FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF634B IRFS634B IRF634BFP001
OCR Text	...m junction temperature 2. L = 4.9mh, IAS = 8.1A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 8.1A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description	250V N-Channel B-FET / Substitute of IRF634 & IRF634A 250V N-Channel MOSFET
File Size	856.87K / 10 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK3341-01
OCR Text	... Gate(G) Source(S) *1 L=11.9mh, Vcc=90V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-s...
Description	N-CHANNEL SILICON POWER MOS-FET
File Size	103.64K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF620B IRF620BFP001 IRFS620BFP001
OCR Text	...m junction temperature 2. L = 3.9mh, IAS = 5.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description	200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A 200V N-Channel B-FET / Substitute of IRF620 & IRF620A 200V N-Channel MOSFET
File Size	872.64K / 10 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK2877-01
OCR Text	...6 213.4 60 150 -55 ~ +150 L=10.9mh,Vcc=50V > Equivalent Circuit Unit V A A V A mJ W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage...
Description	N-channel MOS-FET
File Size	235.26K / 3 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK2879-01
OCR Text	...20 761 150 150 -55 ~ +150 L=34.9mh,Vcc=50V > Equivalent Circuit Unit V A A V A mJ W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage...
Description	N-channel MOS-FET
File Size	251.50K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH8250 IRH7250
OCR Text	...ing TJ = 25C, Peak IL = 26A,L=1.9mh, RG=25 ISD 26A, di/dt 190A/s, VDD BVDSS, TJ 150C Suggested RG =2.35 Pulse width 300 s; Duty Cycle 2% Pre-Irradiation Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 durin...
Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
File Size	313.63K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL620S
OCR Text	...= 50V, starting TJ = 25C, L = 6.9mh RG = 25, IAS = 5.2A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRL620S ID, Drain Current (Amps) Fig 1. Typical Output Characteristics, TC = 25oC ID, Drain C...
Description	Power MOSFET(Vdss=200V Rds(on)=0.80ohm Id=5.2A) Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
File Size	453.97K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF644B IRFS644B IRF644 IRF644BFP001
OCR Text	...m junction temperature 2. L = 3.9mh, IAS = 14A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description	250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRF644 & IRF644A
File Size	897.68K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFP240 FN2087
OCR Text	... 50V, starting TJ = 25oC, L = 1.9mh, RGS = 50, peak IAS = 20A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 20 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 16 12 8 4 0 0 ...
Description	From old datasheet system 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
File Size	56.15K / 7 Page	View it Online	Download Datasheet

				CDIL[Continental Device India Limited]
Part No.	BU508F BUF508F BU508AF BU508DF
OCR Text	... IC=4.5A,hFE=2.5,VCC=140V LC=0.9mh, LB=3H 7.0 0.5 s s * Pulse test: Pulse Duration <300s , Duty cycle < 1.5%. Continental Device India Limited Data Sheet Page 1 of 3 BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plasti...
Description	NPN POWER TRANSISTORS
File Size	38.48K / 3 Page	View it Online	Download Datasheet

For 9mh Found Datasheets File :: 273 Search Time::0.938ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |