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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW25N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
350W 300W 250W 200W 150W 100W 50W 0W 25C
60A
50A
IC, COLLECTOR CURRENT
50... |
| Description |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
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| File Size |
375.62K /
11 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IDP04E120 IDB04E120
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| OCR Text |
...tics Reverse recovery time
V R=800V, IF=4A, di F/dt=750A/s, Tj=25C V R=800V, IF=4A, di F/dt=750A/s, Tj=125C V R=800V, IF=4A, di F/dt=750A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 115 180 185 7.15 8 8.... |
| Description |
Silicon Power Diodes - 4A EmCon in TO263
Silicon Power Diodes - 4A EmCon in TO220-2
Fast Switching EmCon Diode
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| File Size |
194.34K /
9 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG34N100E2
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| OCR Text |
...0 tFI , FALL TIME (s) 1.5 VCE = 800V 1.0 VCE = 400V 0.5 10
20
0 +25
0.0 +50 +75 +100 +125 +150 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 TC , CASE TEMPERATURE (oC)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4... |
| Description |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
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| File Size |
38.45K /
5 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE369
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| OCR Text |
...eatures: D High Voltage: VCBO = 800V D Gain Specified to 200mA Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon NPN Transistor TV Vertical Deflection, Switch
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| File Size |
18.94K /
2 Page |
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it Online |
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Silan Microelectronics
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| Part No. |
SVD8N80T
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| OCR Text |
800v n-channel mosfet general description svd8n80t/f is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary s-rin tm structure dmos technology. the improved planar stripe cell and... |
| Description |
800V N-CHANNEL MOSFET
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| File Size |
560.64K /
8 Page |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE386
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| OCR Text |
.... . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . .... |
| Description |
Silicon NPN Transistor Audio Power Amp, Switch
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| File Size |
20.49K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5440
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| OCR Text |
800V, 10A, Isolated Tab
Applications: D Temperature Control D Motor Control D Transformerless Power Supply Regulators D Relay and Coil Pulsing D Power Supply Crowbar Protection Absolute Maximum Ratings: Anode to Cathode Non-Repetitive Peak... |
| Description |
Silicon Controlled Rectifier (SCR) 800V, 10A, Isolated Tab
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| File Size |
21.63K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5536
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| OCR Text |
...ures: D 400A Surge Capability D 800V Blocking Voltage Absolute Maximum Ratings: Peak Reverse Blocking Voltage (Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS Forward Current (TC = +80C, ... |
| Description |
Silicon Controlled Rectifier (SCR)
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| File Size |
19.28K /
2 Page |
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it Online |
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