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NTE[NTE Electronics]
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| Part No. |
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
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| OCR Text |
...3 5875 5877 5879 5881 5883 5887 5891 5811
50 100 200 300 400 500 600 800 1000 1200
75 150 275 385 500 613 725 950 1200 1400
50 100 200 300 400 50 600 800 1000 1200
- - - - 500 626 750 950 1150 1350
12 12 12 12 12 12 12 12 12 ... |
| Description |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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| File Size |
23.18K /
2 Page |
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Allegro Microsystems Inc
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| Part No. |
UCN5891LW UCN5891A
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| OCR Text |
5891
Frequently applied in non-impact printer systems, the UCN5890A, UCN5890LW, UCN5891A, and UCN5891LW are BiMOS II serial-input, latched source (high-side) drivers. The octal, high-current smart-power ICs merge an 8-bit CMOS shift regist... |
| Description |
PERIPHERAL DRIVER,8 DRIVER,BICMOS,SOP,16PIN,PLASTIC
PERIPHERAL DRIVER,8 DRIVER,BICMOS,DIP,16PIN,PLASTIC
From old datasheet system
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| File Size |
170.38K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HFA310205 HFA3102BZ HFA3102BZ96 HFA3102B96 HFA3102
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| OCR Text |
...2 PHASE(S12) 75.4177 62.8941 52.5891 44.5019 38.2308 33.3405 29.4764 26.3755 |S21| 15.1273 13.9061 12.3970 10.9257 9.62995 8.53559 7.62375 6.86423 PHASE(S21) 165.227 152.045 141.185 132.570 125.781 120.378 116.005 112.398 |S22| 0.959692 0.8... |
| Description |
Dual Long-Tailed Pair Transistor Array
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| File Size |
203.76K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
...3 0.5909 0.5905 0.5901 0.5896 0.5891 0.5886 0.5880 0.5873 0.5867 0.5859 0.5852 0.5844 0.5835 0.5827 0.5817 0.5808 0.5797 0.5787 Ang S22 -156.56 -161.57 -165.41 -168.51 -171.09 -173.31 -175.27 -177.04 -178.65 179.86 178.46 177.14 175.87 174.... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
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| Part No. |
ISGAL22V10C-7LK ISPGAL22V10B-7LJ ISPGAL22V10C-7LJ ISPGAL22V10C-15LKI ISPGAL22V10C-10LJ ISPGAL22V10B-10LJ ISPGAL22V10C-10LK ISPGAL22V10C-15LJ
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| OCR Text |
...ectronic Signature
... 5890, 5891
Byte 7 Byte 6 Byte 5 Byte 4 Byte 3 Byte 2 Byte 1 Byte 0
5
Specifications ispGAL22V10C Specifications ispGAL22V10 ispGAL22V10B
ABSOLUTE MAXIMUM RATINGS(1)
Supply voltage VCC ...................... |
| Description |
In-System Programmable E2CMOS PLD EE PLD, 15 ns, PDSO28
In-System Programmable E2CMOS PLD EE PLD, 15 ns, PQCC28
In-System Programmable E2CMOS PLD EE PLD, 10 ns, PDSO28
In-System Programmable E2CMOS PLD EE PLD, 10 ns, PQCC28
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| File Size |
243.61K /
15 Page |
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it Online |
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