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For 500-5000 Found Datasheets File :: 15181 Search Time::1.359ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	...A) 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 C ms =1 s Pw 10 m ion at er C) Op 25 DC c = (T 3 2 1 0 50 100 150 Ambient Temperature Ta (C) 20...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SD2439
OCR Text	... Collector Current I C( A) 5 10 500 0.2 0.5 1 Collector Current I C( A) 5 10 0.1 1 5 10 50 100 Time t(ms) 500 1000 2000 fT - IE Characteristics (Typical) (VCE=12V) 100 30 Safe Operating Area (Single Pulse) 80 10 m...
Description	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
File Size	24.85K / 1 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text	...0 6 phase 1000 1000 500 500 0 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 2.5 0 0 500 1000 1500 Mean forward current, IF(AV) - (A) 2000 Fig.2 Maximum (limit) forward characteristics VFM Equati...
Description	Rectifier Diode
File Size	96.53K / 7 Page	View it Online	Download Datasheet

				??????浣? STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	ESDA14V2SC6 ESDA6V1SC5 ESDA6V1SC6 ESDA5V3SC5 ESDA5V3SC6 ESDAXXSC6 ESDA14V2SC5 ESDA25SC6 ESDAXXSC5 ESDA14V2
OCR Text	... CURRENT: IR max. < 20 A at VBR 500 W PEAK PULSE POWER (8/20 s) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are monolithic voltage suppressor...5000 Fig. 2: Peak pulse power versus exponential pulse duration (Tj initial = 25 C). Ppp(W) E...
Description	QUAD TRANSIL ARRAY FOR ESD PROTECTION DUAL TRANSIL ARRAY FOR ESD PROTECTION
File Size	68.34K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...10 1.0 1.4 1.8 2.2 2.6 3.0 0 500 1000 F o rw a rd V o lta ge D ro p - V FM (V ) d i f /dt - (A /s) 1500 2000 Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HA8050 HA8050S
OCR Text	...* High DC Current Gain (hFE=100~500 at IC=150mA) * Complementary to HA8550S TO-92 Absolute Maximum Ratings * Maximum Temperatures Stora...5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.5...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.62K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	HE8050S
OCR Text	...0 150 Typ. 140 Max. 1 100 0.5 1 500 10 Unit V V V uA nA V V Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 VEB=5V, I...5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.5...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	37.94K / 4 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HE8050
OCR Text	.................................. 500 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE1 hF...5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.5...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.35K / 3 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HPN2907A PN2907A
OCR Text	... Power Dissipation-PD (mW) 500 400 300 200 100 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) HPN2907A HSMC Product S...5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.5...
Description	PNP EPITAXIAL PLANAR TRANSISTOR
File Size	36.46K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... Pulse Avalanche Energy (mJ) 500 VDS L D R IV E R 400 TOP BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

For 500-5000 Found Datasheets File :: 15181 Search Time::1.359ms
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