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MICROSEMI CORP-PMG MICROELECTRONICS
WHITE ELECTRONIC DESIGNS CORP
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| Part No. |
7P10FLV511C25 7P10FLV511I15 7P10FLV511I25 7P12FLV511C15 7P12FLV511I15 7P12FLV511I25 7P20FLV580I25
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| OCR Text |
... provide densities ranging from 4mb to 40mb in 4mb increments. in support of the pc card 95 standard for word wide access, devices are paired. therefore, the flash array is structured in 64k word (128kbytes) blocks. write, rea... |
| Description |
5M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
5M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
6M X 16 FLASH 3V PROM CARD, 150 ns, XMA68
6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
10M X 16 FLASH 3V PROM CARD, 250 ns, XMA68
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| File Size |
410.71K /
11 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K5T6432YT K5T6432YTM-T310
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| OCR Text |
...ram (Flash) * Flash Bank Size : 4mb / 4mb / 28Mb / 28Mb * Flash Endurance : 100,000 Program/Erase Cycles * Ambient Temperature : -25C ~ 85C * Endurance : 100,000 Program/Erase Cycles * Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm p... |
| Description |
64mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
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| File Size |
602.15K /
40 Page |
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MICRON[Micron Technology]
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| Part No. |
MT28F321P20 MT28F321P18
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| OCR Text |
...nty-one erasable blocks Bank a (4mb for data storage) Bank b (28Mb for program storage) * VCC, VCCQ, VPP voltages* 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F321P18) 1.80V (MIN), 2.20V (MAX) VCC, VCCQ (MT28F321P20) 0.9V (MIN) VPP (in-system P... |
| Description |
FLASH MEMORY
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| File Size |
365.32K /
35 Page |
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WHITE ELECTRONIC DESIGNS CORP
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| Part No. |
8P001SRA1204I15
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| OCR Text |
...- type ii card typical based on 4mb (lower densities will have greater storage times) ? unlimited write cycles, no endurance issues ? optional features: ? 2kb eeprom attribute memory containing cis ? optional hardware write protect swit... |
| Description |
512K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68
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| File Size |
111.62K /
10 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q1618C2BX-15C N04Q1618C2BX-70C
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| OCR Text |
...1618C2B
Advance Information
4mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction
256Kx16 bit POWER SAVER TECHNOLOGY Overview
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbi... |
| Description |
4mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
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| File Size |
198.33K /
13 Page |
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TMT[Taiwan Memory Technology]
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| Part No. |
T71L6816A
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| OCR Text |
...f addr ess table and supports a 4mb external SSRAM. T71L6816A is also a high performance Fast-Ethernet switch with fully compliance with the IEEE802.3, 802.3u and 802.3x specifications. The T71L6816A can be implemented with external PHY chi... |
| Description |
Sixteen-port 10/100 Switch
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| File Size |
800.45K /
22 Page |
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it Online |
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Price and Availability
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