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  400 600 800 1200v Datasheet PDF File

For 400 600 800 1200v Found Datasheets File :: 1579    Search Time::2.406ms    
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    DFM600LXS12-A000

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM600LXS12-A000
OCR Text ... = 4500A/s, VR = 600V Min. Typ. 400 100 40 Max. Units A C mJ Tvj = 125C unless stated otherwise. Symbol Irr Qrr Erec Parameter Reverse re...600 400 200 0 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, VF - (V) Transient thermal impedance, Zth ...
Description Fast Recovery Diode Module Preliminary Information

File Size 92.10K  /  7 Page

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    MP02XX175 MP02XX175-08 MP02XX175-10 MP02XX175-12

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. MP02XX175 MP02XX175-08 MP02XX175-10 MP02XX175-12
OCR Text ... R - Load 800 0.10 0.08 600 400 200 0 0.12 0.15 0.20 0.30 0.40 L - Load 0 20 60 40 80 100 120 140 0 Maximum ambient temperature - (C) 100 200 300 D.C. output current - (A) 400 Fig. 6 50/60Hz single phase bridge dc outp...
Description Dual Diode Modules 双二极管模块

File Size 84.87K  /  9 Page

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    BUP300 Q67078-A4203-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP300 Q67078-A4203-A2
OCR Text ...V, f = 1 MHz VGE 16 14 400 V 12 10 8 6 4 2 0 0 800 V 4 8 12 16 20 24 32 Q Gate Semiconductor Group 6 Jul-30-1996 BUP 300 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Grou...
Description IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system

File Size 338.36K  /  7 Page

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    BUP305 BUP305D Q67040-A4225-A2 BUP305-D

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP305 BUP305D Q67040-A4225-A2 BUP305-D
OCR Text ... 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 10 20 30 40 50 800 V nC 65 Q Gate Short circuit safe operating ar...600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 De...
Description IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

File Size 383.95K  /  7 Page

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    BUP306D Q67040-A4222-A2 BUP306-D

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUP306D Q67040-A4222-A2 BUP306-D
OCR Text ... 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 800 V 20 40 60 80 100 nC 130 QGate Short circuit s...600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 Ju...
Description IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...

File Size 220.31K  /  8 Page

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    BUP307D Q67040-A4221-A2 BUP307-D

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Sanyo Electric Co., Ltd.
Part No. BUP307D Q67040-A4221-A2 BUP307-D
OCR Text ...2 10 8 6 4 2 0 0 20 40 60 80 400 V 800 V 100 120 140 nC 180 Q Gate Short circuit safe operating area Reverse biased ...600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 De...
Description IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管

File Size 342.91K  /  7 Page

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    BUP307 Q67078-A4201-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP307 Q67078-A4201-A2
OCR Text ...2 10 8 6 4 2 0 0 20 40 60 80 400 V 800 V 100 120 140 nC 180 Q Gate Typ. switching time t = f(RG) inductive load, with freewheel diode BYP 102 parameter: Tj = 125 C, VCE = 600 V, VGE = 15 V, IC = 10 A Semiconductor G...
Description From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) IGBT的(低正向压降高开关速度低尾电流的无闩锁雪崩额定

File Size 343.52K  /  7 Page

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    BUT11APX-1200 BUT11APX-1200_1

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11APX-1200 BUT11APX-1200_1
OCR Text ... 3 2 -VBB 1 0 0 200 400 600 800 1,000 1,200 1,400 VCEclamp (V) Fig.13. Reverse bias safe operating area. Tj Tj max Fig.14. Test circuit for reverse bias safe operating area. Vcl 1200v; Vcc = 150V; VBB = -5V; LB = 1H;L...
Description From old datasheet system
Silicon Diffused Power Transistor

File Size 56.72K  /  7 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ...1.9 2.1 2.6 60 32 MAX 24 16 280 400 2.5 2.5 3.2 70 40 0.42 1.25 UNITS ns ns ns ns mJ mJ V ns ns oC/W oC/W Typical Performance Curves 45...600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 125 150 TC , CASE...
Description 43A, 1200v, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...V, L = 400H 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGUR...
Description 1200v, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200v/ NPT Series N-Channel IGBT
35A, 1200v, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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