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  40-80v Datasheet PDF File

For 40-80v Found Datasheets File :: 6029    Search Time::1.656ms    
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    2SB950 2SB950A 2SD1276A 2SD1276

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB950 2SB950A 2SD1276A 2SD1276
OCR Text ...atings -60 -80 -60 -80 -5 -8 -4 40 2 150 -55 to +150 Unit V 16.70.3 3.10.1 14.00.5 s Absolute Maximum Ratings Parameter Collect...80V, IE = 0 VCE = -30V, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 60.93K  /  2 Page

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    2SB951 2SB951A 2SD1277A 2SD1277

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB951 2SB951A 2SD1277A 2SD1277
OCR Text ...nit V 16.70.3 3.10.1 1.40.1 1.30.2 14.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage C...80V, IE = 0 VEB = -7V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = -4A VCE = -3V, IC = -8A IC = -4A, I...
Description Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

File Size 69.42K  /  3 Page

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    2SB954 2SB954A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB954 2SB954A
OCR Text ...2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Absolute Maximum Ratings (TC=25C) Pa...80V, VBE = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = - 0.2A VCE = -4V, IC = -1A IC = -1...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 45.35K  /  2 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text ...yp. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3 Max. 4,5 500 1,0 100 4,0 4 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns...80V; IAV=4A Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [F...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    AD8615 AD8615ARJ AD8618 AD8615AD8616AD8618 AD8618ARU AD8616 AD8616AR AD8616ARM AD8618AR

AD[Analog Devices]
adi
Part No. AD8615 AD8615ARJ AD8618 AD8615AD8616AD8618 AD8618ARU AD8616 AD8616AR AD8616ARM AD8618AR
OCR Text ... over the extended industrial (-40 to +125C) temperature range. The AD8615, single, is available in the tiny 5-lead SOT-23 package. The AD8616, dual, is available in the 8-lead microSOIC and narrow SOIC surface mount packages. The REV. PrA ...
Description Precision 20 MHz CMOS Single Rail-to-Rail Input/Output Operational Amplifier
Precision 20 MHz CMOS Rail-to-Rail Input/Output Operational Amplifiers

File Size 190.13K  /  5 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... Typ. --- --- Max. 0.95 40 Units C/W 5/13/98 IRF1310NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specifie...80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...-- --- --- --- --- --- 11 56 45 40 4.5 7.5 1900 450 230 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1...80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V,...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text .... ---- ---- ---- Max. 0.90 40 62 Units C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint a...80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80V 42 VGS = 10V,...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...ure, for 10 seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns ...80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 190 ID = 28A 26 nC VDS = 80V 82 VGS = 10V,...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...ue, 6-32 or M3 srew Max. 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ...80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V,...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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