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  3-300s Datasheet PDF File

For 3-300s Found Datasheets File :: 11249    Search Time::1.578ms    
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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...es * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source V...300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. FDS6680S Rev A ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die cont...300s; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperature...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...r 10 seconds Max. 42 30 140 3.8 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Th...300s; duty cycle 2%. Uses IRF1310N data and test conditions Starting TJ = 25C, L = 1.7mH RG ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die conta...300s; duty cycle 2%. IRF1310N 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ... seconds Max. 41 29 160 170 3.8 1.1 0.025 20 230 41 17 5.5 -55 to + 175 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C V...300s; duty cycle 2%. VDD = 25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 25A. (See Figure 12)...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ...10 seconds Max. 162 115 650 3.8 200 1.3 20 519 95 20 5.0 -55 to +175 -55 to +175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V...300s; duty cycle 2%. * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended fo...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ...crew Max. 162 115 650 200 1.3 20 519 95 20 5.0 -55 to + 175 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V ...300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss w...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...ion 1997 File Number 2208.3 5-1 IRF234, IRF235, IRF236, IRF237 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ...300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Tra...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . ....300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Tra...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ... 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM...300s; duty cycle 2%. ISD 0.96A, di/dt 170A/s, VDD V(BR)DSS, T J 150C Data and specifica...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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For 3-300s Found Datasheets File :: 11249    Search Time::1.578ms    
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