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Renesas Electronics Corporation |
| Part No. |
2SA1461-T2B-A
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| Description |
Bipolar Power Transistors, , /
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| Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
| Part No. |
2SA1461-T1B-A
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| Description |
Bipolar Power Transistors, , /
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| Tech specs |
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Official Product Page
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NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ624 2SJ624-T1B 2SJ624-T2B
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| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
69.46K /
8 Page |
 View
it Online |
Download Datasheet
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NEC Corp.
NEC[NEC]
|
| Part No. |
2SJ621 2SJ621-T2B 2SJ621-T1B
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| Description |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
| File Size |
71.11K /
8 Page |
View
it Online |
Download Datasheet |
| |
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NEC, Corp.
NEC[NEC]
|
| Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
|
| Description |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
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| File Size |
63.69K /
8 Page |
View
it Online |
Download Datasheet |
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Bom2Buy.com
Price and Availability
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|
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: 2SA1461-T2B |
| Maker: NEC |
| Pack: SOT23 |
| Stock: Reserved |
| Unit price
for : |
|
50: $0.05 |
|
100: $0.05 |
| 1000:
$0.05 |
|
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