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2a 800v Datasheet PDF File

For 2a 800v Found Datasheets File :: 1125 Search Time::2.594ms
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				INFINEON[Infineon Technologies AG]
Part No.	SKP02N120 SKB02N120
OCR Text	...50 260 C 1) VCE 1200V IC 2a Eoff 0.11mJ Tj 150C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4278 Q67040-S4279 ...800v, VGE = +15V/0V, RG = 91) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
File Size	406.61K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
OCR Text	...ard voltage VF V G E = 0, I F = 2a T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I...800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	428.03K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB04E12007
OCR Text	...1.4 1.6 1.8 2 v 2.4 v f 2a 4a 8a 2007-09-01 rev.2.2 page 5 idb04e120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 50 100 150 ...
Description	Fast Switching EmCon Diode
File Size	200.54K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4598 IGB03N120H2E3045A
OCR Text	...10s 1A 50s 100s 0,1A 500s DC 2a Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz ,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY...800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
File Size	393.63K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IDD04E120 Q67040-S4388
OCR Text	... VF 1.8 IF 4A 1.6 2a 1.4 1.2 V VF 3 1 -60 -20 20 60 100 160 C Tj Rev.2.1 Page 4 2005-02...800v, T j = 125C 500 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800v, Tj = 12...
Description	Fast Switching EmCon Diode
File Size	232.09K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKB01N120H2
OCR Text	... COLLECTOR CURRENT 3A TC=80C 2a TC=110C 20s 0,1A 50s 1A Ic 100Hz 1kHz 10kHz 100kHz 200s ,01A DC 1V 10V 100V 1000V 0A 10Hz...800v, VGE = +15V/0V, RG = 241) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = ...
Description	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	382.27K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKP01N120H2
OCR Text	... COLLECTOR CURRENT 3A TC=80C 2a TC=110C 20s 0,1A 50s 1A Ic 100Hz 1kHz 10kHz 100kHz 200s ,01A DC 1V 10V 100V 1000V 0A 10Hz...800v, VGE = +15V/0V, RG = 241) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = ...
Description	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	384.38K / 14 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	K2647
OCR Text	...te resistance r ds(on) i d =2a v g s =10v 3,19 4,0 w forward transconductance g fs i d =2a v d s =25v 2 s input capaci...800v 4w 4a 40w fap-iis series > characteristics typical output characteristics drain-source-on-state...
Description	Search --To 2SK2647
File Size	295.74K / 2 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK2763-01
OCR Text	...S=0V Tch=125C VGS=30V VDS=0V ID=2a VGS=10V ID=2a VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=...800v 4 2SK2763-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch);...
Description	N-channel MOS-FET
File Size	296.84K / 3 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSRF02N80SL
OCR Text	2a , 800v , r ds(on) 6.1 n-ch enhancement mode power mosfet 03-dec-2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ito - 220 rohs compliant product ...
Description	N-Ch Enhancement Mode Power MOSFET
File Size	487.99K / 5 Page	View it Online	Download Datasheet

For 2a 800v Found Datasheets File :: 1125 Search Time::2.594ms
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