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2110-2170 Datasheet PDF File

For 2110-2170 Found Datasheets File :: 1365 Search Time::4.25ms
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				INFINEON[Infineon Technologies AG]
Part No.	PTF210301 PTF210301A PTF210301E
OCR Text	2110-2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband...
Description	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
File Size	333.91K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210451 PTF210451E
OCR Text	2110-2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features * * Internal m...
Description	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
File Size	402.88K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two-Carrier WCDMA Drive-U...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
OCR Text	...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	558.64K / 12 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B36691 B39212B3669U410
OCR Text	...y Maximum insertion attenuation 2110,0 ... 2170,0 MHz Amplitude ripple (p-p) 2110,0 ... 2170,0 MHz Return loss 2110,0 ... 2170,0 MHz Attenuation 50,0 1400,0 1910,0 2300,0 3700,0 5300,0 ... 1400,0 ... 1910,0 ... 1980,0 ... 3700,0 ... 5300,0 ...
Description	SAW Tx filter W-CDMA IF
File Size	92.72K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G22L-130 BLF7G22LS-130
OCR Text	...rier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 D (%) 32 33 ACPR (dBc) -32[1] -39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at ...
Description	Power LDMOS transistor
File Size	159.42K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF7G22LS-130
OCR Text	...rier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 D (%) 32 34 ACPR (dBc) -32[1] -39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at ...
Description	Power LDMOS transistor
File Size	151.12K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S160-12S A2T21S160-12SR3
OCR Text	...covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 600 ma, p out = 38 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) outp...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	452.74K / 13 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230
OCR Text	... MW4IC2230MBR1 MW4IC2230GMBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Freescale Semiconductor, Inc... CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230MBR1 CASE 1329A - 03 TO - 27...
Description	MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
File Size	656.88K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S21210HR3 MRF7S21210HSR3
OCR Text	...lications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., F...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	456.22K / 15 Page	View it Online	Download Datasheet

For 2110-2170 Found Datasheets File :: 1365 Search Time::4.25ms
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