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				Thinki Semiconductor Co., Ltd. Thinki Semiconductor Co...
Part No.	BY229X-200 BY229X-400 BY229X800 BY229X400 BY229X200 BY229X-600
OCR Text	...nt peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400...a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a ...
Description	8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectiflers
File Size	664.75K / 2 Page	View it Online	Download Datasheet

				Thinki Semiconductor
Part No.	BY229B-200
OCR Text	...nt peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400...a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a ...
Description	(BY229B200 - BY229B800) 8.0 Ampere Surface Mount D2PAK Pkg Ultra Fast Recovery Rectifiers
File Size	710.44K / 2 Page	View it Online	Download Datasheet

				Thinki Semiconductor
Part No.	BY229-200 BY229200 BY229400
OCR Text	...nt peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400...a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a ...
Description	(BY229200 - BY229800) 8.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifiers
File Size	692.80K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-200 BUK555-200A BUK555-200B
OCR Text	...esistance; VGS = 5 V MAX. -200A 200 14 125 175 0.23 MAX. -200B 200 13 125 175 0.28 UNIT V A W C PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VA...
Description	PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	70.01K / 7 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS832436B-200 GS832436B-225 GS832436B-250 GS832418B-225I GS832418B-150 GS832436B-225I
OCR Text	... (x36) Curr (x72) -250 -225 -200 -166 -150 -133 Unit 2.3 2.5 3.0 3.5 3.8 4.0 ns 4.0 4.4 5.0 6.0 6.6 7.5 ns 365 560 660 360 550 640 6.0 7....a 37,748,736-bit high performance 2-die synchronous SRAM module with a 2-bit burst address counter. ...
Description	2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 6 ns, PBGA119 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 10 ns, PBGA119
File Size	1,146.78K / 46 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	BYW77G-200-TR BYW77G 4602
OCR Text	200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 25 A 200 V 50 ns 0.85 V 1&3 4 4 2 FEATURES AND BENEFITS 1 3 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD A...
Description	HIGH EFFICIENCY FAST RECOVERY DIODES From old datasheet system HIGH EFFICIENCY FAST RECOVERY DIODES
File Size	230.53K / 5 Page	View it Online	Download Datasheet

				Integrated Device Technology, Inc.
Part No.	75KTA062134-200
OCR Text	...uip- product brief 75kta062134-200 development board description idt provides the idt75kta062134-200 development board to further accelerat...a complete hardware search accelerated network processing development platform. utilizing the idt 9m...
Description	Network Search Engine Development Board for the Intel??IXDP2400 Development Platform
File Size	65.78K / 2 Page	View it Online	Download Datasheet

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