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  200 120w Datasheet PDF File

For 200 120w Found Datasheets File :: 337    Search Time::1.828ms    
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    L6561D L6561

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STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. L6561D L6561
OCR Text ...VOS = 0 Min. 1.6 Typ. 1.7 -0.05 200 0 Max. 1.8 -1 450 15 Unit V A ns mV 3/11 L6561 ELECTRICAL CHARACTERISTICS (continued) ZERO CURREN...120w, 220VAC) D1 BYT13-600 C6 T R7 (*) 998K C3 1F 68K 5 2 1 7 4 + Vo=400V Po=120w R3 (*) 440...
Description POWER FACTOR CORRECTOR 功率因数校正

File Size 114.50K  /  11 Page

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    MAP110-4004 MAP110-4305 MAP110 MAP110-1012 MAP110-1024 MAP110-4000 MAP110-4001 MAP110-4002 MAP110-4003 MAP110-4010 MAP11

Harwin PLC
POWER-ONE[Power-One]
Part No. MAP110-4004 MAP110-4305 MAP110 MAP110-1012 MAP110-1024 MAP110-4000 MAP110-4001 MAP110-4002 MAP110-4003 MAP110-4010 MAP110-4011 MAP110-4015 MAP110-4200 MAP110-4300 MAP110-1005
OCR Text ...COOLED, 110W FORCED AIR COOLED (200 LFM) MODEL OUTPUT VOLTAGE ADJUSTMENT RANGE CONVECTION COOLED CURRENT (NOTE 1) FORCED AIR CURRENT LINE R...120w 120w 80W/110W 110W 90W/120w 120w 60W/110W 110W 65W/120w 120w INPUT SPECIFICATION...
Description MAP110 SERIES MAP110系列

File Size 276.70K  /  5 Page

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    SD1660 2844

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. SD1660 2844
OCR Text ...emperature 60 30 3.0 25 310 +200 - 55 to +150 V V V A W C C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistanc...120w PEP, VCE = 24 V VCE = 24 V VCE = 24 V VCE = 24 V VCB = 28 V F= 600KHz (2 tones) ICQ = 2 ...
Description 800/900 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS
From old datasheet system

File Size 74.64K  /  7 Page

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    STA506

STMICROELECTRONICS[STMicroelectronics]
Part No. STA506
OCR Text ...300mV Test conditions Min. Typ. 200 Max. 270 50 Unit m A % % ns ns ns ns ns ns V V High current Dead Time (dinamic) L=22H; C = 470nF; RL ...120w into 4ohm. This mode of operation is enabled with the CONFIG pin (pin.24) connected to VREG1 an...
Description 40V 4A QUAD POWER HALF BRIDGE

File Size 141.31K  /  14 Page

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    Infineon
Part No. SPB46N03L SPP46N03L SPP46N3L
OCR Text ... IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Gate source peak voltage, aperiodic Power dissipation VGS Vgs...120w l kji h g [V] V f GS a b c 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 90 ID ...
Description SIPMOS ? Power Transistor
From old datasheet system

File Size 87.35K  /  9 Page

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    2SD2222

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2222
OCR Text ... Power Transistors PC -- Ta 200 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) TC=25C 9 IB=1.0mA 2SD2222 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 30 10 3 1...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 70.27K  /  3 Page

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    ST13007DFP

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. ST13007DFP
OCR Text ...I B1 = 1 A V BE(off) = -5 V L = 200 H (see figure 1) IC = 5 A V CL = 250 V R BB = 0 VBE(off) = -5 V B1 = 1 A o L = 200 H T C = 125 C (see figure 1) 1.7 90 2.2 150 2.3 150 s ns s ns * Pulsed: Pulse duration = 300 s, duty cycle 2...
Description    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

File Size 219.03K  /  7 Page

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    ST13007D

STMICROELECTRONICS[STMicroelectronics]
Part No. ST13007D
OCR Text ...I B1 = 1 A V BE(off) = -5 V L = 200 H (see figure 1) IC = 5 A V CL = 250 V R BB = 0 VBE(off) = -5 V B1 = 1 A o L = 200 H T C = 125 C (see figure 1) 1.7 90 2.2 150 2.3 150 s ns s ns * Pulsed: Pulse duration = 300 s, duty cycle 2...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 212.11K  /  7 Page

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