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TY Semiconductor Co., L...
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| Part No. |
KI1555DL
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| OCR Text |
2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 absolute maximum ratings t a =25 5 secs steady state 5 secs steady state drain-source voltage v ...57a p-ch 0.510 0.600 v gs =2.5v,i d = 0.40a n-ch 0.560 0.630 v gs =-2.5v,i d = -0.48a p-ch 0.720 0.8... |
| Description |
PIN Configuration Drain-Source Voltage Vds 20V
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| File Size |
156.11K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN013-100PS NXPSEMICONDUCTORSN.V.-PSMN013-100PS
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| OCR Text |
...ions and domestic equipment. 1.2 features and benefits ? high efficiency due to low switching and conduction losses ? suitable for standar...57a p tot total power dissipation t mb = 25 c; see figure 2 --170w t j junction temperature -55 - 1... |
| Description |
N-channel 100V 13.9m standard level MOSFET in TO220. PSMN013-100PS<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
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| File Size |
195.92K /
15 Page |
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Microsemi, Corp.
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| Part No. |
APT40M70B2VFRG APT40M70LVFRG
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| OCR Text |
...250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10...57a) peak diode recovery dv / dt 5 reverse recovery time (i s = -57a, di / dt = 100a/s) revers... |
| Description |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
141.81K /
4 Page |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW19N10 SWD19N10
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| OCR Text |
...l resistance, junction to case 2.0 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 6...57a, r g =25? - 7.5 25 ns tr rising time - 150 310 t d(off) turn off delay time - 20 50 t f fall ti... |
| Description |
N-channel MOSFET
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| File Size |
689.39K /
7 Page |
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Samwin
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| Part No. |
SW3710
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| OCR Text |
... (note 2) 482 mj e ar repetitive avalanche energy (note 1) 7 mj dv/dt peak diode...57a r ds(on) : 0.023 ohm 1. gate 2. drain 3. source 1 2 3 to - 220 sw3710 samwin 1 2 3 item sales ... |
| Description |
N-channel MOSFET
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| File Size |
713.91K /
7 Page |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B2LL04 APT50M75B2LLG
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| OCR Text |
...ain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.075 100 500 100 3 5
(VGS = 10V, ID = 28.5A)
Ohms A nA Vo...57A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 57A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
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| File Size |
162.79K /
5 Page |
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it Online |
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