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RECTRON[Rectron Semiconductor]
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Part No. |
1n4150
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OCR Text |
1n4150
1n4150 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW /C (25C) Forward Current IF 200 mA Junction Temp. Tj -65 to ... |
Description |
SIGNAL DIODE
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File Size |
15.93K /
1 Page |
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HY
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Part No. |
1n4150
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OCR Text |
1n4150
HIGH-SPEED SWITCHING DIODE DO - 35
.020 TYP. (0.51) 1.083(27.5) MIN
FEATURES
High reliability High forward current capability
APPLICATIONS
High speed switch and general purpose use in
computer and industrial applicati... |
Description |
Small Signal Switching Diode
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File Size |
67.66K /
2 Page |
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it Online |
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Micro Commercial Compon...
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Part No. |
1n4150
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OCR Text |
1n4150 500mw 75 volt silicon epitaxial diode features ? low current leakage ? compression bond construction ? low cost maximum ratings ? o perating temperature: -55 c to +150 c ? storage temperature: -55 c ... |
Description |
500mW 75 Volt Silicon Epitaxial Diode
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File Size |
351.43K /
2 Page |
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it Online |
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GE[General Semiconductor]
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Part No. |
1n4150
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OCR Text |
1n4150
Small Signal Diodes
DO-35
min. 1.083 (27.5)
FEATURES Silicon Epitaxial Planar Diode For general purpose and switching.
max. .079 (2.0)
max. .150 (3.8)
This diode is also available in other
case styles including: the ... |
Description |
Small Signal Diodes
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File Size |
27.89K /
1 Page |
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it Online |
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Digitron Semiconductors
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Part No. |
1N3600
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OCR Text |
1n4150 switching rectifier maximum ratings @ 25c operating junction and storage temperature range -65 to 175c operating current 300ma @ t a = 25c derating current 2.0ma dc/c above t l = 75c @ l = 3/8? forward surge cur... |
Description |
SWITCHING RECTIFIER
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File Size |
114.54K /
2 Page |
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it Online |
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Price and Availability
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