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  17ns Datasheet PDF File

For 17ns Found Datasheets File :: 372    Search Time::2.312ms    
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    K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E641612C-TC50 K4E641612C-45 K4E641612C-50 K4E641612C-L K4E641612C-T K4E641612C-T45 K4E641612C-T50 K4E641612C-T60 K4E641612C-TC K4E641612C-TC45 K4E641612C-TC60 K4E641612C-TL50 K4E641612C-TL60 K4E661612C K4E661612C-45 K4E661612C-50 K4E661612C-60 K4E661612C-L K4E661612C-L45 K4E661612C-L50 K4E661612C-L60 K4E661612C-T K4E661612C-T45 K4E661612C-T50 K4E661612C-T60 K4E661612C-TC K4E661612C-TC45 K4E661612C-TC50 K4E661612C-TC60 K4E661612C-TL50 K4E661612C-TL60 K4E641612C
OCR Text ... tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and...
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out

File Size 882.29K  /  36 Page

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    K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
OCR Text ...ycle(CS=Controlled) 4.1. Delete 17ns Part Final Rev. 4.0 Feb. 25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifica...
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns

File Size 167.22K  /  8 Page

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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ...ns 50ns 60ns tCAC 13ns 15ns 17ns tRC 69ns 84ns 104ns tHPC 16ns 20ns 25ns Remark 5V/3.3V 5V/3.3V 5V/3.3V A0-A11 (A0 - A9)*1 A0 - A7 (A0 - A9)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 1K Refre...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

File Size 550.56K  /  35 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text ... tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns A0~A12 (A0~A11)*1 A0~A10 (A0~A11)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products a...
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 414.70K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text ... tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns A0~A12 (A0~A11)*1 A0~A9 (A0~A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products an...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text ... tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns A0~A12 (A0~A11)*1 A0~A9 (A0~A10)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products an...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN-15 PA7024JN-20 PA7024JNI-25 PA7024P-15 PA7024P-20 PA7024PI-25 PA7024S-

ICT
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
Part No. PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN-15 PA7024JN-20 PA7024JNI-25 PA7024P-15 PA7024P-20 PA7024PI-25 PA7024S-15 PA7024S-20 PA7024SI-25 PA7024JI-2 PA7024JN-1 PA7024JN-2 PA7024JNI- PA7024PI-2
OCR Text ...-20 = 13ns/20ns tpdi/tpdx -25 = 17ns/25ns tpdi/tpdx Temperature Range (Blank) = Commercial 0 to 70C I = Industrial -40 to +85C 6 of 6
Description 20ns programmable electrically erasable logic array
15ns programmable electrically erasable logic array
Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列

File Size 362.04K  /  6 Page

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    MAX4636
Part No. MAXIM
OCR Text ...erature 56ns (typ) Turn-On Time 17ns (typ) Turn-Off Time o +1.8V to +5.5V Single-Supply Operation o Rail-to-Rail(R) Signal Handling o Low Crosstalk: -67dB at 1MHz o High Off-Isolation: -65dB at 1MHz o THD: 0.1% MAX4636 _______________...
Description CMOS Analog Switch

File Size 207.64K  /  12 Page

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For 17ns Found Datasheets File :: 372    Search Time::2.312ms    
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