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  12.00v Datasheet PDF File

For 12.00v Found Datasheets File :: 3799    Search Time::0.922ms    
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    HGT1S10N120BNST

Fairchild Semiconductor
Part No. HGT1S10N120BNST
OCR Text ...tp10n120bn, hgt1s10n120bns 35a, 1200v, npt series n-channel igbt the hgtg10n120bn, hgtp10n120bn and hgt1s10n120bns are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. ...
Description 35A, 1200V, NPT Series N-Channel IGBT

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    IR2135 IR2135J IR2135S IR2233J IR2133 IR2133J IR2133S IR2235S IR2235J IR2235 IR2233 IR2233S IR2133STR IR2133PBF IR2135PB

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IR2135 IR2135J IR2135S IR2233J IR2133 IR2133J IR2133S IR2235S IR2235J IR2235 IR2233 IR2233S IR2133STR IR2133PBF IR2135PBF IR2233JTR IR2133JPBF IR2133JTR IR2135JPBF IR2133SPBF IR2135SPBF
OCR Text ... (typ.) Deadtime (typ.) 600V or 1200V max. 200 mA / 420 mA 10 - 20V or 12 - 20V 750/700 ns 250 ns * * * * * * * * Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10V...
Description 3-PHASE BRIDGE DRIVER 3相桥式驱动器
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a 28-lead SOIC package
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a 28-pin DIP package
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-pin DIP package
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a mod. 44-lead PLCC package
3 Phase Driver, Separate High and Low Side Inputs, Overcurrent Comparator, Latching Fault Logic, Fault Clear Input, Synchronized Shutdown Input, 200ns Deadtime in a 28-lead SOIC package
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package

File Size 215.57K  /  12 Page

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    22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 22RIA120M 22RIA160M 22RIA80MS90 22RIA80S90 22RIA 22RIA10 22RIA100 22R

IRF[International Rectifier]
International Rectifier, Corp.
Part No. 22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 22RIA120M 22RIA160M 22RIA80MS90 22RIA80S90 22RIA 22RIA10 22RIA100 22RIA100M 22RIA100MS90 22RIA100S90 22RIA10M 22RIA10MS90 22RIA10S90 22RIA120 22RIA120MS90 22RIA120S90 22RIA140 22RIA140M 22RIA140MS90 22RIA140S90 22RIA160 22RIA160MS90 22RIA160S90 22RIA20 22RIA20M 22RIA20MS90 22RIA20S90 22RIA60 22RIA60M 22RIA60MS90 22RIA60S90 22RIA80 22RIA80M
OCR Text ... 130 22RIA Series (100 to 1200V) R thJC (DC) = 0.86 K/W 130 22RIA Series (100 to 1200V) RthJC (DC) = 0.86 K/W 120 120 110 Conduction Angle 110 Conduction Period 100 30 100 60 30 60 90 120 180 DC ...
Description 800V 22A Phase Control SCR in a TO-208AA (TO-48) package
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package
100V 22A Phase Control SCR in a TO-208AA (TO-48) package
600V 22A Phase Control SCR in a TO-208AA (TO-48) package
MEDIUMPOWERTHYRISTORS
400V 22A Phase Control SCR in a TO-208AA (TO-48) package
Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes
MEDIUM POWER THYRISTORS 中功率晶闸管

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    50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50RIA10 50RIA100 50RIA100M 50RIA100S90 50RIA100S90M 50RIA10M 50RIA10S90 5

IRF[International Rectifier]
Vishay Semiconductors
Part No. 50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50RIA10 50RIA100 50RIA100M 50RIA100S90 50RIA100S90M 50RIA10M 50RIA10S90 50RIA10S90M 50RIA120M 50RIA120S90 50RIA120S90M 50RIA140 50RIA140M 50RIA140S90 50RIA160 50RIA160M 50RIA160S90 50RIA160S90M 50RIA20 50RIA20M 50RIA20S90 50RIA20S90M 50RIA40 50RIA40S90M 50RIA60 50RIA60M 50RIA60S90 50RIA60S90M 50RIA80 50RIA80M 50RIA80S90 50RIA140S90M 50RIA160MS90
OCR Text ...re (C) 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (C) 130 130 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W 120 Conduction Angle 120 110 Conduction Period 110 30...
Description 100V 50A Phase Control SCR in a TO-208AC (TO-65) package
800V 50A Phase Control SCR in a TO-208AC (TO-65) package
1000V 50A Phase Control SCR in a TO-208AC (TO-65) package
400V 50A Phase Control SCR in a TO-208AC (TO-65) package
1600V 80A Phase Control SCR in a TO-208AC (TO-65) package
1200V 50A Phase Control SCR in a TO-208AC (TO-65) package
1400V 80A Phase Control SCR in a TO-208AC (TO-65) package
600V 50A Phase Control SCR in a TO-208AC (TO-65) package
MEDIUM POWER THYRISTORS
Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN

File Size 204.94K  /  8 Page

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    APT100GT120JR

Microsemi, Corp.
Microsemi Corporation
Part No. APT100GT120JR
OCR Text 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT(R) The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switchi...
Description Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT

File Size 187.32K  /  6 Page

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    FGH30N120FTD FGH30N120FTDTU

Fairchild Semiconductor
Part No. FGH30N120FTD FGH30N120FTDTU
OCR Text 1200v, 30a trench igbt november 2008 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol description ratings units v ces collector to emitter voltage 1200 v ...
Description Field stop trench technology

File Size 580.64K  /  9 Page

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    PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text ...s ranging from 10A 600V to 800A 1200V. The power semiconductors used in these modules are based on the field proven H-Series IGBT and diode processes. In Table 6.1 the third generation family has been divided into two groups, the "Low Profi...
Description USING INTELLIGENT POWER MODULES
FLAT-BASE TYPE INSULATED PACKAGE

File Size 922.36K  /  31 Page

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    PP225D120

POWEREX[Powerex Power Semiconductors]
Part No. PP225D120
OCR Text 1200V TM Half Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply,...
Description POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly

File Size 360.25K  /  6 Page

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    SCS205KG

ROHM
Part No. SCS205KG
OCR Text ... reduced temperature dependence 1200v 5a v r i f q c l features 17nc 1) shorter recovery time a w symbol l construction silicon carbide epitaxial planer type parameter v v a a a v rm tube - type packaging reel size (mm) c scs205kg basic or...
Description Switching loss reduced, enabling high-speed switching . (2-pin package)

File Size 147.51K  /  6 Page

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    IPS
Part No. FTD04N60C FTW30N20A FTA04N65 FTA04N65C FTA10N65C FSA12N60A
OCR Text ...e igbt planar trench npt pt 300-1200v 300-1200v power power power ic ic ic discrete mosfet planar trench coolmos 60-1200v 20-100v 500-900v depletion mode 500-850v bjt npn 200-1500v rectifier p-n schottky 200-1200v 12-200v free datasheet ht...
Description N-Channel Enhancement

File Size 74.29K  /  6 Page

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