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IRF[International Rectifier]
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| Part No. |
IRFN350
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| OCR Text |
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Provisional Data Sheet No. PD-9.1551
HEXFET(R) POWER MOSFET
400 Volt, 0.315 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. Th... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)
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| File Size |
176.61K /
6 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFN340
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| OCR Text |
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Provisional Data Sheet No. PD-9.1550
HEXFET(R) POWER MOSFET
400 Volt, 0.55 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A) 功率MOSFET N沟道BVdss \u003d00V，的Rds（on）\u003d 0.55ohm，身份证\u003d 10A条）
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| File Size |
175.28K /
6 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFN340SMD
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| OCR Text |
IRFN340SMD
MECHANICAL DATA Dimensions in mm (inches)
N-CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (... |
| Description |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
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| File Size |
23.56K /
2 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRFN250
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| OCR Text |
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Provisional Data Sheet No. PD-9.1549
HEXFET(R) POWER MOSFET
200 Volt, 0.100 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. Th... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压，的Rds（on）\u003d 0.100ohm，身份证\u003d 27.4A
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| File Size |
180.78K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFN240
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| OCR Text |
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Provisional Data Sheet No. PD-9.1548
HEXFET(R) POWER MOSFET
200 Volt, 0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
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| File Size |
181.17K /
6 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
|
| Part No. |
IRFN240SMD
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| OCR Text |
IRFN240SMD
MECHANICAL DATA Dimensions in mm (inches)
N-CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
23.32K /
2 Page |
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http://
IRF[International Rectifier]
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| Part No. |
IRFN054
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| OCR Text |
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Provisional Data Sheet No. PD-9.1543A
HEXFET(R) POWER MOSFET
60 Volt, 0.020 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. Th... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
|
| File Size |
180.33K /
6 Page |
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it Online |
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|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
http://
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| Part No. |
IRFN054SMD
|
| OCR Text |
IRFN054SMD
MECHANICAL DATA Dimensions in mm (inches)
N-CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (... |
| Description |
N-CHANNEL POWER MOSFET 45 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
23.28K /
2 Page |
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it Online |
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|
http://
IRF[International Rectifier]
|
| Part No. |
IRFN044
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| OCR Text |
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Provisional Data Sheet No. PD-9.1545
HEXFET(R) POWER MOSFET
60 Volt, 0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
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| File Size |
175.47K /
6 Page |
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it Online |
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