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-mosiv Datasheet PDF File

For -mosiv Found Datasheets File :: 62 Search Time::1.734ms
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					Toshiba Semiconductor
Part No.	2SK356406 2SK3564
OCR Text	MOSIV) 2SK3564 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: \|Yfs\| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth ...
Description	Silicon N Channel MOS Type Switching Regulator Applications
File Size	243.41K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK356506
OCR Text	MOSIV) 2SK3565 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth ...
Description	Silicon N Channel MOS Type Switching Regulator Applications
File Size	244.52K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3566
OCR Text	MOSIV) 2SK3566 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: \|Yfs\| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth ...
Description	Silicon N Channel MOS Type Switching Regulator Applications
File Size	244.03K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3880 2SK388006
OCR Text	MOSIV) 2SK3880 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement mode...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	240.20K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK4014
OCR Text	MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 1.6 (typ.) : \|Yfs\| = 5.0 S (typ.) Unit: mm :...
Description	Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications
File Size	232.19K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SJ30407 2SJ304
OCR Text	MOSIV) 2 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain-source ON resistance High forward transfer admittance Enhancement mode : RDS (ON) = 80 m (typ.) : \|Yfs\| = 8.0 S (typ.) Unit: mm Low ...
Description	DC−DC Converter, Relay Drive and Motor Drive Applications
File Size	691.01K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3798 2SK379806
OCR Text	MOSIV) 2SK3798 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement-mode: Vth ...
Description	Silicon N Channel MOS Type Switching Regulator Applications
File Size	211.86K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3799 2SK379906
OCR Text	MOSIV) 2SK3799 Switching Regulator Applications Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 1.0 (typ.) : \|Yfs\| = 6.0 S (typ.) Unit: mm Low leakage current : IDSS = 100A (max) (VDS = 720 V) Enhanceme...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	207.03K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3878
OCR Text	MOSIV) 2SK3878 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	205.09K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3879
OCR Text	MOSIV) 2SK3879 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement mo...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	287.06K / 6 Page	View it Online	Download Datasheet

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