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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
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| Part No. |
IRF1404LPBF IRF1404SPBF
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| OCR Text |
... v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v q g total gate charge ??? 160 200 i d = 95a q gs gate-to-source... |
| Description |
HEXFET? Power MOSFET
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| File Size |
3,880.58K /
10 Page |
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it Online |
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Xlsemi
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| Part No. |
XL6006
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| OCR Text |
...m 1 features n wide 5v to 32v input voltage range n maximum boost output up to 60v n 0.22v fb adjustable led drive current n directly drive 16 series 1w/3w led at vin=24v n fixed 180khz switching frequency n max. 5a sw... |
| Description |
180KHz 60V 5A Switching Current Boost LED Constant Current Driver
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| File Size |
181.59K /
11 Page |
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it Online |
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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
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| Part No. |
IRF1404ZS IRF1404ZL
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| OCR Text |
..., i d = 75a i d = 75a v ds = 32v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 75a, v gs = 0v t j = 25c, i f ... |
| Description |
AUTOMOTIVE MOSFET Advanced Process Technology
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| File Size |
4,677.82K /
12 Page |
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it Online |
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KOA
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| Part No. |
TF16AT
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| OCR Text |
...o fusing characteristics graph) 32v +70c -55c to +125c tf10bn0.25 c 0.25a 1270 tf10bn0.20 a 0.20a 1990 143 120 94 73 tf16at0.63 i 0.63a tf16at0.80 k 0.80a tf16at1.00 l 1.00a tf16at1.25 m 1.25a 59 tf16at1.60 n 1.60a eu tf16at2.00 s 2.00a 42 ... |
| Description |
thin film chip fuse
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| File Size |
159.26K /
2 Page |
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it Online |
Download Datasheet |
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