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Micross Components
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Part No. |
ICE60N130
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OCR Text |
...s 50 v/ns v ds = 480v, i d = 23a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m 2.5 screws ma... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
760.27K /
4 Page |
View
it Online |
Download Datasheet
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Micross Components
|
Part No. |
ICE60N130FP
|
OCR Text |
...s 50 v/ns v ds = 480v, i d = 23a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m 2.5 screws max... |
Description |
N-Channel Enhancement Mode MOSFET
|
File Size |
760.79K /
4 Page |
View
it Online |
Download Datasheet
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Icemos
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Part No. |
ICE60N130FP
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OCR Text |
... summary i d t a =25 o c 23a max bv dss @tjmax i d =250ua 650v min r ds(on) v gs =10v 0.13 typ q g v ds =480v 82nc typ icemos and its sister company 3 d semi own the fundamental patent... |
Description |
N-Channel Enhancement Mode MOSFET
|
File Size |
541.20K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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