250 x 032 fml fiqd exp cont b pdf Datasheet P2 Description --- IC-ON-LINE


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250 x 032 fml fiqd exp cont b Datasheet PDF File

For 250 x 032 fml fiqd exp cont b Found Datasheets File :: 97+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |

				Molex, Inc.<br>
Part No.	19606-0006
Description	LOW PROF.fiqd.AVIK.250x032 ON TAPE 5 mm2, bRASS, TIN FINISH, PUSH-ON TERMINAL<br>
File Size	76.44K / 1 Page	View it Online	Download Datasheet

				Molex, Inc.<br>
Part No.	19003-0005
Description	.250x.032 94V-0 FEM. fiqd (AA-2201VN) 1 mm2, bRASS, TIN FINISH, PUSH-ON TERMINAL<br>
File Size	62.38K / 1 Page	View it Online	Download Datasheet

				Semelab(Magnatec)<br>TT electronics Semelab Limited<br>Seme LAb<br>
Part No.	SML9030-T254 SML9030T254
Description	P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))<br>
File Size	20.30K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre controls, Inc.<br>SEME-LAb<br>Seme LAb<br>
Part No.	IRFM250
Description	N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））<br>
File Size	15.33K / 2 Page	View it Online	Download Datasheet

				SemeLAb<br>SEME-LAb[Seme LAb]<br>
Part No.	IRFN340SMD
Description	N-Channel Power MOSFET(bVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(bVdss:400V,Id(cont):10A,Rds(on):0.55Ω))<br>
File Size	23.56K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited<br>Semelab(Magnatec)<br>SEME-LAb[Seme LAb]<br>
Part No.	IRFY430M-T257
Description	Publications, books RoHS Compliant: NA<br>N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))<br>N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS<br>
File Size	19.79K / 2 Page	View it Online	Download Datasheet

				SemeLAb<br>Seme LAb<br>International Rectifier<br>http://<br>
Part No.	IRF054SMD
Description	N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））<br>
File Size	22.26K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd.<br>International Rectifier, Corp.<br>Seme LAb<br>
Part No.	IRFN140SMD
Description	ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET<br>N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））<br>
File Size	22.23K / 2 Page	View it Online	Download Datasheet

				NxP Semiconductors N.V.<br>TT electronics Semelab Limited<br>Seme LAb<br>
Part No.	IRFE230 2N6798U
Description	N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））<br>N-Channel N沟道<br>
File Size	16.94K / 2 Page	View it Online	Download Datasheet

				Seme LAb<br>
Part No.	IRFE9130
Description	P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））<br>
File Size	16.50K / 2 Page	View it Online	Download Datasheet

For 250 x 032 fml fiqd exp cont b Found Datasheets File :: 97+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |