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    PDTA114TU PDTA114TS PDTA114TE PDTA114TT PDTA114TU115 PDTA114TK PDTA114TM

NXP Semiconductors N.V.
Part No. PDTA114TU PDTA114TS PDTA114TE PDTA114TT PDTA114TU115 PDTA114TK PDTA114TM
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 100 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Appl...
Description PNP resistor-equipped transistors; R1 = 10 kW, R2 = open
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open PNP配电阻型晶体管;R1=10千欧姆,R2=开

File Size 72.59K  /  11 Page

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    PDTA113Z PDTA113ZT215 PDTA113ZK PDTA113ZS PDTA113ZE PDTA113ZU PDTA113ZM PDTA113ZU115

NXP Semiconductors N.V.
Part No. PDTA113Z PDTA113ZT215 PDTA113ZK PDTA113ZS PDTA113ZE PDTA113ZU PDTA113ZM PDTA113ZU115
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I General purpose switchi...
Description PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW
PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT323 (SC-70); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

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    PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT

NXP Semiconductors
Part No. PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage V...
Description NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?

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    PBRN113E PBRN113EK PBRN113ES PBRN113ET

NXP Semiconductors
Part No. PBRN113E PBRN113EK PBRN113ES PBRN113ET
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage V...
Description NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 1 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 1 k搂?

File Size 145.83K  /  17 Page

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    BC807 BC327 BC807W BC327T/R BC807-25W/T3 BC807-40.215

NXP Semiconductors N.V.
Part No. BC807 BC327 BC807W BC327T/R BC807-25W/T3 BC807-40.215
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick ...
Description    45 V, 500 mA PNP general-purpose transistors
500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 223.85K  /  19 Page

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    PDTB123T PDTB123TK PDTB123TS

NXP Semiconductors
Part No. PDTB123T PDTB123TK PDTB123TS
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs 1.3 Applications ...
Description PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = open
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

File Size 108.36K  /  10 Page

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    PDTB123E PDTB123EK PDTB123ES PDTB123ET

NXP Semiconductors
Part No. PDTB123E PDTB123EK PDTB123ES PDTB123ET
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs 10 % resistor ratio t...
Description PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?

File Size 117.92K  /  10 Page

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    BCP51 BCX51 BC636

NXP Semiconductors
Part No. BCP51 BCX51 BC636
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I I I I Linear voltage regulators High-side switches MO...
Description 45 V, 1 A PNP medium power transistors

File Size 129.87K  /  15 Page

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    BCX55 BCP55 BC637 BCP55T/R BCP55-16

NXP Semiconductors N.V.
Part No. BCX55 BCP55 BC637 BCP55T/R BCP55-16
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I I I I Linear voltage regulators Low-side switches MOS...
Description 60 V, 1 A NPN medium power transistors

File Size 145.76K  /  15 Page

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    BC639 BCP56 BCX56-16.115 BCP56-10 BCX56-10

NXP Semiconductors
Part No. BC639 BCP56 BCX56-16.115 BCP56-10 BCX56-10
OCR Text ...o available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I High current I Two current gain selections I High power dissipation capability 1.3 Applications I I I I Linear voltage regulators Low-side switches MOS...
Description 80 V, 1 A NPN medium power transistors

File Size 145.80K  /  15 Page

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