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  u-turn Datasheet PDF File

For u-turn Found Datasheets File :: 28630    Search Time::3.938ms    
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    IRF8313PBF IRF8313TRPBF IRF8313PBF-15

International Rectifier
Part No. IRF8313PBF IRF8313TRPBF IRF8313PBF-15
OCR Text ... DRIVER VDS L RG D.U.T IAS tp + V - DD A VGS 20V 0.01 I AS Fig 14a. Unclamped Inductive Test Circuit RD Fig 14b. Unclamped Inductive Waveforms VDS 90% VDS VGS RG D.U.T. + - VDD VGS Pulse Wi...
Description HEXFET Power MOSFET
Fully Characterized Avalanche Voltage and Current

File Size 252.92K  /  10 Page

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    STGIPS14K60

STMicroelectronics
Part No. STGIPS14K60
OCR Text ...rnal block diagram Pin 1 OUT U VBOOT U LIN Vboot Pin 25 P LIN-U HIN-U VCC SD/OD HVG HIN VCC DT LVG CP+ GND OUT U NU OU...Turn-on time Crossover time (on) Turn-off time Crossover time (off) Reverse recovery time Turn-on sw...
Description IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded

File Size 551.11K  /  19 Page

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    STGIPS10K60A

STMicroelectronics
Part No. STGIPS10K60A
OCR Text ... Figure 1. Pin 1 in OUTU Vboot U boot Internal block diagram and pin configuration Internal block diagram Pin 25 in P L INU HINU VCC ...Turn-on time Crossover time (on) Turn-off time Crossover time (off) Reverse recovery time Turn-on sw...
Description IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded

File Size 431.61K  /  17 Page

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    GWM100-01X1-SMD GWM100-01X1-SL

IXYS Corporation
Part No. GWM100-01X1-SMD GWM100-01X1-SL
OCR Text ...5w100gc p h a s e - o u t ? 2011 ixys all rights reserved 2 - 6 20110505f gwm 100-01x1 ixys reserves the right to change limit...turn-on energy & switching times vs. collector current, inductiv e switching fig. 10 typ. tu...
Description Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

File Size 314.55K  /  6 Page

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    IRFP260 IRFP260PBF SIHFP260 SIHFP260-E3

Vishay Siliconix
Part No. IRFP260 IRFP260PBF SIHFP260 SIHFP260-E3
OCR Text ...iconix VDS VGS RG RD D.U.T. + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. ...
Description Power MOSFET

File Size 538.87K  /  8 Page

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    SDIP-38L

STMicroelectronics
Part No. SDIP-38L
OCR Text ... description Symbol OUTU Vboot U LINU HINU OP-U OPOUT U OP+U CINU OUTV Vboot V LINV HINV OP-V OPOUT V OP+V CINV OUTW Vboot W LINW HINW OP-W...Turn-on time Crossover time (on) Turn-off time Crossover time (off) Reverse recovery time Turn-on sw...
Description IGBT intelligent power module (IPM) 14 A, 600 V, DBC isolated SDIP-38L molded

File Size 456.24K  /  21 Page

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    IRLIZ14G IRLIZ14GPBF

Vishay Siliconix
Part No. IRLIZ14G IRLIZ14GPBF
OCR Text ...iliconix RD VDS VGS RG D.U.T. + - VDD 5V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10...
Description Power MOSFET

File Size 1,639.87K  /  8 Page

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    IR3870MBF IR3870MTR1PBF IR3870MTRPBF

International Rectifier
Part No. IR3870MBF IR3870MTR1PBF IR3870MTRPBF
OCR Text ... 500 450 S w itc h in g F re q u e n c y (k H z ) 400 350 300 250 200 150 100 50 0 0 2 4 6 Output Current (A) 8 10 12 On-Tim e (nS) 315...turn on the high side MOSFET. Choose the soft start capacitor: Once the soft start time has chosen, ...
Description 10A HIGHLY INTEGRATED WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR

File Size 1,598.98K  /  20 Page

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    HFP630

SemiHow Co.,Ltd.
Part No. HFP630
OCR Text ...t) = 1 .7 4 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) ( Z JC Therma Response (t), al 10 -1 0 .0 5 0 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 10 0 10 -2 10 -5 10 ...
Description 200V N-Channel MOSFET

File Size 292.69K  /  8 Page

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    4N60G-TND-R 4N60G-K08-5060-R 4N60G-TF3T-T 4N60G-TQ2-R 4N60G-TMS-T 4N60G-TQ2-T

Unisonic Technologies
Part No. 4N60G-TND-R 4N60G-K08-5060-R 4N60G-TF3T-T 4N60G-TQ2-R 4N60G-TMS-T 4N60G-TQ2-T
OCR Text ...and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) ...
Description 4A, 600V N-CHANNEL POWER MOSFET

File Size 427.97K  /  9 Page

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