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For tradeoff Found Datasheets File :: 359    Search Time::0.687ms    
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    APT27GA90BD15 APT27GA90SD15

Microsemi Corporation
Part No. APT27GA90BD15 APT27GA90SD15
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C delay times and simple gate ...
Description High Speed PT IGBT

File Size 252.15K  /  9 Page

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    APT27GA90K

Microsemi Corporation
Part No. APT27GA90K
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description High Speed PT IGBT

File Size 214.34K  /  6 Page

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    APT35GA90BD15 APT35GA90SD15

Microsemi Corporation
Part No. APT35GA90BD15 APT35GA90SD15
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C delay times and simple gate ...
Description High Speed PT IGBT

File Size 240.00K  /  9 Page

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    APT35GA90B APT35GA90S

Microsemi Corporation
Part No. APT35GA90B APT35GA90S
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description High Speed PT IGBT

File Size 207.99K  /  6 Page

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    APT80GA90B

Microsemi Corporation
Part No. APT80GA90B
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description High Speed PT IGBT

File Size 211.70K  /  6 Page

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    APT80GA90LD40

Microsemi Corporation
Part No. APT80GA90LD40
OCR Text ...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description High Speed PT IGBT

File Size 241.44K  /  9 Page

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    MBRM1H100T3G

ON Semiconductor
Part No. MBRM1H100T3G
OCR Text ...rd voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite(R) has the same thermal perform...
Description Surface Mount Schottky Power Rectifier

File Size 119.24K  /  5 Page

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    MBRM2H100T3G

ON Semiconductor
Part No. MBRM2H100T3G
OCR Text ...rd voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite(R) has the same thermal perform...
Description Surface Mount Schottky Power Rectifier

File Size 119.59K  /  5 Page

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    AN718

VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. AN718
OCR Text ...ges far outweigh the efficiency tradeoff. A lower operating frequency forces the designers to use much larger inductance and capacitance to maintain the same ripple FaxBack 408-970-5600, request 70588 www.siliconix.com 3 AN718 Vis...
Description From old datasheet system
Powering the Pentium VRE with the Si9145 Voltage Mode Controlled PWM Converter

File Size 190.77K  /  8 Page

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For tradeoff Found Datasheets File :: 359    Search Time::0.687ms    
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