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  rg-8 Datasheet PDF File

For rg-8 Found Datasheets File :: 36863    Search Time::1.891ms    
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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...D = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 2 0 s PU LS E W ID TH Tc = 2 5C J 100 ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200)...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ... Starting TJ = 25C, L = 3.6mH RG = 25, I AS = -10A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material )....8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 100 -ID , D ra in -to -S o u rc e C u rre...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...DD = -28V --- I D = -10A ns --- RG = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 100 -ID , D ra in -to -S o u rce C u rre ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    IRG7U100HF12B

International Rectifier
Part No. IRG7U100HF12B
OCR Text ...c (a) v cc =600v,v ge =+/-15v, rg=15 ohm,t j =125c e on e off e rec 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 e (mj) rg ( ? ) v c...8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig...
Description 1200V 100A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package

File Size 735.02K  /  6 Page

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    NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V

ETC
New Japan Radio
Part No. NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V
OCR Text ... 40 V /V =2.5V, GV=40dB RF=2k, RG=20, RL=2k, CL=0pF Gain Ta=-40C + - Voltage Gain/Phase vs. Frequency (with Capacitive load) V /V =2.5...8 6 V /V =2.5V, GV=0dB, CL=100pF RS=50, RL=2k + - Phase Margin [deg] 70 Voltage Gain [dB]...
Description DUAL OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
Full-Swing Input and Output type Dual Operational Amplifier

File Size 338.93K  /  9 Page

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    Isahaya Electronics Cor...
Part No. VLA526A-06AR
OCR Text ...ff-pulse width ? 4 ? ? s rg (on)p inside gate resistor 1 turn-on, ?h?output, high side ? 20 ? ? rg (off)p inside gate res...8 v t d set time for timer pin 26 0.5v ? 1.0 5.1 s t timer timer maintenance time of prot...
Description Hybrid IC for driving IGBT modules

File Size 160.54K  /  6 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...0.5, VCE = 800V, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 350W...8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) ...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    STGWT30V60F STGW30V60F

STMicroelectronics
ST Microelectronics
Part No. STGWT30V60F STGW30V60F
OCR Text ...600 30 40 v cc =400v, v ge =15v rg=10, tj=175c 800 1000 1200 1400 eon eoff 50 60 1600 1800 2000 am17423v1 e(j) 0 r g () 400 10 20 200 600 30...8 v ge (v) 40 tj=175c tj=25c tj=-40c 9 100 10 11 v ce = 10v am17417v1 electrical characteristics ...
Description    Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

File Size 1,449.05K  /  19 Page

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For rg-8 Found Datasheets File :: 36863    Search Time::1.891ms    
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