Description |
C BAND, 3.9 pF, silicon, ABRUpT VARIABLE CApACITANCE DIODE C BAND, 0.8 pF, silicon, HYpERABRUpT VARIABLE CApACITANCE DIODE C BAND, 0.8 pF, silicon, ABRUpT VARIABLE CApACITANCE DIODE enhanced pERFORMANCE SURFACE MOUNT EpSM垄芒Hyperabrupt Varactor Diodes TM enhanced pERFORMANCE SURFACE MOUNT EpSM?⑷yperabrupt Varactor Diodes TM enhanced pERFORMANCE SURFACE MOUNT EpSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, silicon, HYpERABRUpT VARIABLE CApACITANCE DIODE C BAND, 1.5 pF, silicon, HYpERABRUpT VARIABLE CApACITANCE DIODE
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