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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
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| OCR Text |
... 0.050 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...40
TEST Single Event Effects Safe Operating Area
SYMBOL SEESOA
Typical Performance Curves
... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
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| File Size |
48.34K /
8 Page |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
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| OCR Text |
... 0.080 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...40
Unless Otherwise Specified
(Continued)
300 TC = 25oC 100 ID , DRAIN CURRENT (A)
30 ID... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
47.77K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
... 0.160 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...40 1.9 7.8 23 3.0 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain t... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
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| OCR Text |
... 0.330 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...40
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43 LET... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
57.42K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSYE923A0R FSYE923A0R1 FSYE923A0R3
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| OCR Text |
... 0.650 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...40
Typical Performance Curves
Unless Otherwise Specified
1E-3 LIMITING INDUCTANCE (HENRY)
... |
| Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
69.30K /
8 Page |
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it Online |
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
HCS132MS HCS132D HCS132DMSR HCS132HMSR HCS132K HCS132KMSR
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| OCR Text |
...ened SOS CMOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Error...40 1.40 UNITS ns ns ns ns V V V V V V
PARAMETER Input to Output
SYMBOL TPLH
(NOTES 1, 2) CO... |
| Description |
NAND-Gate, 2-Input, Schmitt Trigger, Quad, Rad-Hard, High-Speed, CMOS, Logic
Radiation Hardened Quad 2-Input NAND Schmitt Trigger
RESISTOR NETWORK; THR; BUSSED; 4.7K OHM X 15 HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDIP14
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| File Size |
155.84K /
8 Page |
View
it Online |
Download Datasheet |
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