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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 FSS913A0R3 FSS913AOD
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| OCR Text |
... 0.280 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...20 56 22 0.45 30 10 30 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
Drain to Source Vol... |
| Description |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
55.89K /
8 Page |
 View
it Online |
Download Datasheet
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Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
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| Part No. |
FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
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| OCR Text |
Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a seri...20 50 20 0.40 9 3 9 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
Drain to Source Voltag... |
| Description |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
45.72K /
8 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL923A0R3 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 FSL923A0R4
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| OCR Text |
... 0.670 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SE...20 25 10 0.20 15 5 15 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
Drain to Source Volt... |
| Description |
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
57.07K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HCS125MS FN3559 HCS125 HCS125D HCS125DMSR HCS125HMSR HCS125KMSR HCS125K
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| OCR Text |
...rdened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bi...20 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent d... |
| Description |
From old datasheet system
Radiation Hardened Quad Buffer, Three-State
Radiation Hardened Quad Buffer/ Three-State
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| File Size |
92.79K /
9 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM48C512D
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| OCR Text |
... to column address delay time t rad 13 20 ns 10 cas to ras precharge time t crp 5 ns row address set-up time t asr 0 ns row address hold time t rah 8 ns column address set-up time t asc 0 ns column address hold time t cah 10 ns column ad... |
| Description |
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高12K x 8CMOS 动态RAM(带快速页模式))
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| File Size |
347.81K /
20 Page |
View
it Online |
Download Datasheet |
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